scholarly journals A Low Dark Current 160 dB Logarithmic Pixel with Low Voltage Photodiode Biasing

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1096
Author(s):  
Alessandro Michel Brunetti ◽  
Bhaskar Choubey

Extending CMOS Image Sensors’ dynamic range is of fundamental importance in applications, such as automotive, scientific, or X-ray, where a broad variation of incoming light should be measured. The typical logarithmic pixels suffer from poor performance under low light conditions due to a leakage current, usually referred to as the dark current. In this paper, we propose a logarithmic pixel design capable of reducing the dark current through low-voltage photodiode biasing, without introducing any process modifications. The proposed pixel combines a high dynamic range with a significant improvement in the dark response compared to a standard logarithmic pixel. The reported experimental results show this architecture to achieve an almost 35 dB improvement at the expense of three additional transistors, thereby achieving an unprecedented dynamic range higher than 160 dB.

2009 ◽  
Author(s):  
Leo H. C. Braga ◽  
Suzana Domingues ◽  
José G. Gomes ◽  
Antonio C. Mesquita

2018 ◽  
Vol 65 (7) ◽  
pp. 2932-2938 ◽  
Author(s):  
Shuang Cui ◽  
Zhaohan Li ◽  
Chao Wang ◽  
Xiaotian Yang ◽  
Xinyang Wang ◽  
...  

2020 ◽  
Vol 2 (1) ◽  
pp. 79
Author(s):  
Fernando de Souza Campos ◽  
Bruno Albuquerque de Castro ◽  
Jacobus W. Swart

Several CMOS imager sensors were proposed to obtain high dynamic range imager (>100 dB). However, as drawback these imagers implement a large number of transistors per pixel resulting in a low fill factor, high power consumption and high complexity CMOS image sensors. In this work, a new operation mode for 3 T CMOS image sensors is presented for high dynamic range (HDR) applications. The operation mode consists of biasing the conventional reset transistor as active load to photodiode generating a reference current. The output voltage achieves a steady state when the photocurrent becomes equal to the reference current, similar to the inverter operation in the transition region. At a specific bias voltage, the output swings from o to Vdd in a small light intensity range; however, high dynamic range is achieve using multiple readout at different bias voltage. For high dynamic range operation different values of bias voltage can be applied from each one, and the signal can be captured to compose a high dynamic range image. Compared to other high dynamic range architectures this proposed CMOS image pixel show as advantage high fill-factor (3 T) and lower complexity. Moreover, as the CMOS pixel does not operate in integration mode, de readout can be performed at higher speed. A prototype was fabricated at 3.3 V 0.35 µm CMOS technology. Experimental results are shown by applying five different control voltage from 0.65 to 1.2 V is possible to obtain a dynamic range of about 100 dB.


Author(s):  
Martin U. Pralle ◽  
C. Vineis ◽  
C. Palsule ◽  
J. Jiang ◽  
J. E. Carey

Sensors ◽  
2018 ◽  
Vol 18 (4) ◽  
pp. 1166 ◽  
Author(s):  
Neale Dutton ◽  
Tarek Al Abbas ◽  
Istvan Gyongy ◽  
Francescopaolo Mattioli Della Rocca ◽  
Robert Henderson

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