Highly Sensitive Chemical-Vapor Sensor Based on Thin-Film Organic Field-Effect Transistors with Benzothiadiazole-Fused-Tetrathiafulvalene

2012 ◽  
Vol 23 (13) ◽  
pp. 1671-1676 ◽  
Author(s):  
Ge Yang ◽  
Chong-an Di ◽  
Guanxin Zhang ◽  
Jing Zhang ◽  
Junfeng Xiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Organic Field Effect Transistors ◽  
Highly Sensitive ◽  
Vapor Sensor ◽  
Chemical Vapor Sensor

scholarly journals DNA adsorption measured with ultra-thin film organic field effect transistors

2009 ◽  
Vol 24 (9) ◽  
pp. 2935-2938 ◽  
Author(s):  
P. Stoliar ◽  
E. Bystrenova ◽  
S.D. Quiroga ◽  
P. Annibale ◽  
M. Facchini ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Dna Adsorption ◽  
Ultra Thin Film

Flexible organic field-effect transistors fabricated by the electrode-peeling transfer

2003 ◽  
Vol 769 ◽  
Author(s):  
Takeshi Yasuda ◽  
Katsuhiko Fujita ◽  
Tetsuo Tsutsui
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Flexible Substrate ◽  
Chemical Vapor ◽  
Solid Substrate ◽  
Semiconductor Material ◽  
Organic Field Effect Transistors ◽  
Gate Electrode ◽  
Micro Patterning

AbstractWe report a simple and mild fabrication of flexible organic field-effect transistors (OFETs) by an electrode-peeling transfer method. Firstly, fine patterns of source-drain metal electrodes were formed on a solid substrate, where a micro-patterning process such as photolithography is applicable. An organic dielectric layer (poly-chloro-p-xylylene) was deposited by a chemical vapor deposition. Then patterned gate electrode was deposited using a shadow mask. On the top surface of the gate electrode, another adhesive flexible substrate was fixed and the stack of the flexible substrate/gate electrode /dielectric layer /source-drain electrode was peeled away from the solid substrate. The peeling-transfer was completed with a help of a self-assembled monolayer of n-decyl mercaptan as a connecting buffer layer between the gold electrodes and the dielectric layer. Then an organic semiconductor material was deposited on the fresh peeled-off surface on the flexible substrate. When pentacene was used as the semiconductor material, the OFETs exhibited a hole mobility of 0.1 cm2/Vs and a current on/off ratio of 105.

Enhanced Mobility of Organic Field-Effect Transistors with Epitaxially Grown C60 Film by in-situ Heat Treatment of the Organic Dielectric

2005 ◽  
Vol 871 ◽  
Author(s):  
Th. B. Singh ◽  
N. Marjanovic ◽  
G. J. Matt ◽  
S. Günes ◽  
N. S. Sariciftci ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Fields ◽  
Field Effect ◽  
Film Growth ◽  
Field Effect Transistors ◽  
Growth Conditions ◽  
Initial Growth ◽  
Organic Field Effect Transistors ◽  
Enhanced Mobility ◽  
High Electric Fields

AbstractElectron mobilities were studied as a function of thin-film growth conditions in hot wall epitaxially grown C60 based field-effect transistors. Mobilities in the range of ∼ 0.5 to 6 cm2/Vs are obtained depending on the thin-film morphology arising from the initial growth conditions. Moreover, the field-effect transistor current is determined by the morphology of the film at the interface with the dielectric, while the upper layers are less relevant to the transport. At high electric fields, a non-linear transport has been observed. This effect is assigned to be either because of the dominance of the contact resistance over the channel resistance or because of the gradual move of the Fermi level towards the band edge as more and more empty traps are filled due to charge injection.

Organic field-effect transistors using copper phthalocyanine thin film

2003 ◽  
Vol 137 (1-3) ◽  
pp. 991-992 ◽  
Author(s):  
K. Xiao ◽  
Y.Q. Liu ◽  
G. Yu ◽  
D.B. Zhu
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Copper Phthalocyanine ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

scholarly journals Investigation on the Sensing Properties of Organic Field Effect Transistors Using P3HT

2020 ◽  
Author(s):  
Silpa S. Prasad ◽  
Divya G ◽  
Sindhu S ◽  
Shreekrishna Kumar K
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Xrd Pattern ◽  
Humidity Sensing ◽  
Morphological Studies ◽  
Sensing Applications ◽  
Crystalline Nature ◽  
Effect Transistor

The humidity sensing behavior and the properties of P3HT based thin film organic field effect transistor (OFET) has been reported. Layers with (Au)/P3HT/SiO2/(Au) are coated and OFET is fabricated. The XRD pattern of thin films are plotted which shows an orientation of (100) indicating its crystalline nature. The morphological studies report the presence of dreg like structures that can absorb water molecules from a humid environment which can be used in humidity sensing applications.

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