Targeting Cooling for Quantum Dots in White QDs-LEDs by Hexagonal Boron Nitride Platelets with Electrostatic Bonding

2018 ◽  
Vol 28 (30) ◽  
pp. 1801407 ◽  
Author(s):  
Bin Xie ◽  
Haochen Liu ◽  
Run Hu ◽  
Chaofan Wang ◽  
Junjie Hao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Electrostatic Bonding

Tuning the electronic and optical properties of hexagonal boron-nitride nanosheet by inserting graphene quantum dots

2018 ◽  
Vol 32 (06) ◽  
pp. 1850084 ◽  
Author(s):  
Yi-Min Ding ◽  
Jun-Jie Shi ◽  
Min Zhang ◽  
Meng Wu ◽  
Hui Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Graphene Quantum Dots ◽  
Band Gaps ◽  
Hybrid Structures ◽  
Electronic And Optical Properties ◽  
Boron Nitride Nanosheet ◽  
Optoelectronic Nanodevices

It is difficult to integrate two-dimensional (2D) graphene and hexagonal boron-nitride (h-BN) in optoelectronic nanodevices, due to the semi-metal and insulator characteristic of graphene and h-BN, respectively. Using the state-of-the-art first-principles calculations based on many-body perturbation theory, we investigate the electronic and optical properties of h-BN nanosheet embedded with graphene dots. We find that C atom impurities doped in h-BN nanosheet tend to phase-separate into graphene quantum dots (QD), and BNC hybrid structure, i.e. a graphene dot within a h-BN background, can be formed. The band gaps of BNC hybrid structures have an inverse relationship with the size of graphene dot. The calculated optical band gaps for BNC structures vary from 4.71 eV to 3.77 eV, which are much smaller than that of h-BN nanosheet. Furthermore, the valence band maximum is located in C atoms bonded to B atoms and conduction band minimum is located in C atoms bonded to N atoms, which means the electron and hole wave functions are closely distributed around the graphene dot. The bound excitons, localized around the graphene dot, determine the optical spectra of the BNC hybrid structures, in which the exciton binding energies decrease with increase in the size of graphene dots. Our results provide an important theoretical basis for the design and development of BNC-based optoelectronic nanodevices.

Fabrication of Graphene Quantum Dots and Hexagonal Boron Nitride Nanocomposites for Fluorescent Cell Imaging

2013 ◽  
Vol 9 (10) ◽  
pp. 1679-1685 ◽  
Author(s):  
Juan Peng ◽  
Sheng Wang ◽  
Peng-Hui Zhang ◽  
Li-Ping Jiang ◽  
Jian-Jun Shi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Boron Nitride ◽  
Cell Imaging ◽  
Hexagonal Boron Nitride ◽  
Graphene Quantum Dots ◽  
Fluorescent Cell

scholarly journals Etched graphene quantum dots on hexagonal boron nitride

2013 ◽  
Vol 103 (7) ◽  
pp. 073113 ◽  
Author(s):  
S. Engels ◽  
A. Epping ◽  
C. Volk ◽  
S. Korte ◽  
B. Voigtländer ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Graphene Quantum Dots

2D nanocomposite of hexagonal boron nitride nanoflakes and molybdenum disulfide quantum dots applied as the functional layer of all-printed flexible memory device

2018 ◽  
Vol 105 ◽  
pp. 28-35 ◽  
Author(s):  
Muhammad Muqeet Rehman ◽  
Ghayas Uddin Siddiqui ◽  
Mohammad Mutee ur Rehman ◽  
Hyun Bum Kim ◽  
Yang Hoi Doh ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Boron Nitride ◽  
Molybdenum Disulfide ◽  
Hexagonal Boron Nitride ◽  
Memory Device ◽  
Functional Layer

Direct synthesis of graphene quantum dots on hexagonal boron nitride substrate

2014 ◽  
Vol 2 (19) ◽  
pp. 3717-3722 ◽  
Author(s):  
Xuli Ding
Keyword(s):  
Quantum Dots ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Direct Synthesis ◽  
Graphene Quantum Dots ◽  
Metal Catalyst ◽  
The Novel

The novel PL properties of GQDs synthesized on h-BN by CVD without any metal catalyst were revealed.

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