Over 30% External Quantum Efficiency Light‐Emitting Diodes by Engineering Quantum Dot‐Assisted Energy Level Match for Hole Transport Layer

2019 ◽  
Vol 29 (33) ◽  
pp. 1808377 ◽  
Author(s):  
Jiaojiao Song ◽  
Ouyang Wang ◽  
Huaibin Shen ◽  
Qingli Lin ◽  
Zhaohan Li ◽  
...  
Keyword(s):  
Energy Level ◽  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Light Emitting

High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing

RSC Advances ◽  
2016 ◽  
Vol 6 (76) ◽  
pp. 72462-72470 ◽  
Author(s):  
Jingling Li ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehui Xie ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Zno Nanoparticles ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
High Luminance ◽  
Light Emitting

In this work, all-solution processed, multi-layer yellow QLEDs, consisting of a hole transport layer of poly(9-vinylcarbazole), emissive layer of ligand exchanged CuInS2/ZnS QDs, and electron transport layer of ZnO nanoparticles, are fabricated.

scholarly journals High-performance quantum dot light-emitting diodes with hybrid hole transport layer via doping engineering

2016 ◽  
Vol 24 (23) ◽  
pp. 25955 ◽  
Author(s):  
Qianqian Huang ◽  
Jiangyong Pan ◽  
Yuning Zhang ◽  
Jing Chen ◽  
Zhi Tao ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Light Emitting

scholarly journals All-inorganic quantum-dot light-emitting-diodes with vertical nickel oxide nanosheets as hole transport layer

2016 ◽  
Vol 26 (5) ◽  
pp. 503-509 ◽  
Author(s):  
Jiahui Li ◽  
Yuanlong Shao ◽  
Xuecheng Chen ◽  
Hongzhi Wang ◽  
Yaogang Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Nickel Oxide ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Light Emitting

Device Characteristics of Inverted Red Colloidal Quantum-Dot Light-Emitting Diodes Depending on Hole Transport Layers

2021 ◽  
Vol 13 (5) ◽  
pp. 917-921
Author(s):  
Donggu Lee ◽  
Jaehoon Lim ◽  
Myeongjin Park ◽  
Chan-Mo Kang ◽  
Hyunkoo Lee
Keyword(s):  
Energy Level ◽  
Quantum Dot ◽  
Molecular Orbital ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Light Emitting ◽  
Highest Occupied Molecular Orbital ◽  
Layer Structures ◽  
Colloidal Quantum Dot

We investigated the dependence of the device characteristics of inverted red colloidal quantum dot light-emitting diodes on the hole transport layer. Three different hole transport materials, 4,4′-bis(carbazole-9-yl)biphenyl, 4,4,′4″-tri(N-carbazolyl)triphenylamine, N, N′-bis(naphthalen-1-yl)-N, N′-bis(phynyl)-2,2′-dimethylbenzidine, and six different hole transport layer structures were used for comparing the devices’ performances. The turn-on voltage of the devices was dominated by the energy level difference between the lowest unoccupied molecular orbital of the hole-injection layer (molybdenum trioxide) and the highest occupied molecular orbital of the adjacent hole transport material. The hole mobility as well as the energy level difference between the valence band of the quantum dot and the highest occupied molecular orbital of the adjacent hole transport material was significant factors for high luminance and efficiency. Among the considered devices with six different hole transport layer structures, the device with a single 4,4′-bis(carbazole-9-yl)biphenyl layer as a hole transport layer exhibited the best performance, with a peak efficiency of 5.56% at ~10 mA/cm2. All of the devices exhibited nearly the same main emission peak at ~641 nm and a narrow full-width-half-maximum of ~34 nm, and their International Commission on Illumination 1931 color coordinates were very deep red, nearly the same as the BT.2020 red color coordinate of (0.708, 0.292).

All-Inorganic Quantum-Dot Light-Emitting Diodes with Reduced Exciton Quenching by a MgO Decorated Inorganic Hole Transport Layer

2019 ◽  
Vol 11 (12) ◽  
pp. 11119-11124 ◽  
Author(s):  
Yibin Jiang ◽  
Le Jiang ◽  
Fion Sze Yan Yeung ◽  
Ping Xu ◽  
Shuming Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Light Emitting
Sign in / Sign up

Export Citation Format

Share Document