Suppression of Grain Boundary Scattering in Multifunctional p-Type Transparent γ-CuI Thin Films due to Interface Tunneling Currents

2018 ◽  
Vol 5 (6) ◽  
pp. 1701411 ◽  
Author(s):  
Max Kneiß ◽  
Chang Yang ◽  
José Barzola-Quiquia ◽  
Gabriele Benndorf ◽  
Holger von Wenckstern ◽  
...  
2014 ◽  
Vol 32 (6) ◽  
pp. 061503 ◽  
Author(s):  
Katayun Barmak ◽  
Amith Darbal ◽  
Kameswaran J. Ganesh ◽  
Paulo J. Ferreira ◽  
Jeffrey M. Rickman ◽  
...  

1981 ◽  
Vol 10 ◽  
Author(s):  
D. R. Campbell ◽  
S. Mader ◽  
W. K. Chu

ABSTRACTResistivity and grain size measurements on thin films of co-sputtered WSi2 show that the resistivity in this material is dominated by grain boundary scattering. The reflection coefficient for the transport of charge carriers through the grain boundaries was determined to be approximately 0.9.


2015 ◽  
Vol 107 (19) ◽  
pp. 192102 ◽  
Author(s):  
Janne-Petteri Niemelä ◽  
Yasushi Hirose ◽  
Kei Shigematsu ◽  
Masahito Sano ◽  
Tetsuya Hasegawa ◽  
...  

1994 ◽  
Vol 238 (1) ◽  
pp. 158-162 ◽  
Author(s):  
S.Y. Mar ◽  
J.S. Liang ◽  
C.Y. Sun ◽  
Y.S. Huang

2017 ◽  
Vol 5 (39) ◽  
pp. 10191-10200 ◽  
Author(s):  
Si Wang ◽  
Si Hui ◽  
Kunling Peng ◽  
Trevor P. Bailey ◽  
Xiaoyuan Zhou ◽  
...  

Grain boundary scattering is the dominant reason for the deteriorated performance of polycrystalline SnSe compared to single crystals.


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