A New Printed Electronics Approach Eliminating Redundant Fabrication Process of Vertical Interconnect Accesses: Building Multilayered Circuits in Porous Materials

Inkjet printing has been used to produce a range of printed electronic devices, such as solar panels, sensors, and transistors. This article discusses inkjet printing and its employment in the field of printed electronics. First, printing as a field is introduced before focusing on inkjet printing. The materials that can be employed as inks are then introduced, leading to an overview of wetting, which explains the influences that determine print morphology. The article considers how the printing parameters can affect device performance and how one can account for these influences. The article concludes with a discussion on adhesion. The aim is to illustrate that the factors chosen in the fabrication process, such as dot spacing and sintering conditions, will influence the performance of the device.

Download Full-text

From polymer transistors toward printed electronics

Journal of Materials Research ◽

10.1557/jmr.2004.0263 ◽

2004 ◽

Vol 19 (7) ◽

pp. 1963-1973 ◽

Cited By ~ 155

Author(s):

W. Clemens ◽

W. Fix ◽

J. Ficker ◽

A. Knobloch ◽

A. Ullmann

Keyword(s):

High Performance ◽

Organic Materials ◽

Printed Electronics ◽

Fabrication Process ◽

Ring Oscillator ◽

Ambient Conditions ◽

Chip Design ◽

Semiconducting Material ◽

High Performance Polymer ◽

Printing Techniques

Printed organic circuits have the potential to revolutionize the spread of electronic applications. This will be enabled by inexpensive and fast fabrication with printing techniques using soluble organic materials. Two main challenges have to be mastered on the way towards printed electronics. First, the development of stable transistors and an adapted chip design for organic materials, and second, the development of a reliable fabrication process. We present our results on high performance polymer transistors, mainly based on poly-3alkylthiophene (P3AT) as semiconducting material. Fast circuits up to 200 kHz and stable circuits with operation lifetimes of more than 1000 h under ambient conditions without any encapsulation are shown. We also report on a fully printed, all organic ring oscillator.

Download Full-text

Linewidth measurement using the low voltage SEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144681 ◽

1986 ◽

Vol 44 ◽

pp. 652-653

Author(s):

M.G. Rosenfield

Keyword(s):

Electron Microscope ◽

Scanning Electron Microscope ◽

Integrated Circuits ◽

Secondary Electron ◽

Low Voltage ◽

Fabrication Process ◽

Critical Dimensions ◽

Linewidth Measurement ◽

Threshold Technique ◽

Scanning Electron

Minimum feature sizes in experimental integrated circuits are approaching 0.5 μm and below. During the fabrication process it is usually necessary to be able to non-destructively measure the critical dimensions in resist and after the various process steps. This can be accomplished using the low voltage SEM. Submicron linewidth measurement is typically done by manually measuring the SEM micrographs. Since it is desirable to make as many measurements as possible in the shortest period of time, it is important that this technique be automated.Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary electron signal generated by that structure. Thus, it is important to understand how the actual dimension of the line being measured relates to the secondary electron signal. Since different features generate different signals, the same method of relating linewidth to signal cannot be used. For example, the peak to peak method may be used to accurately measure the linewidth of an isolated resist line; but, a threshold technique may be required for an isolated space in resist.

Download Full-text