ChemInform Abstract: PREPARATION OF HIGH-DENSITY SILICON NITRIDE BY A GAS-PRESSURE SINTERING PROCESS

1982 ◽  
Vol 13 (16) ◽  
Author(s):  
C. GRESKOVICH
2010 ◽  
Vol 434-435 ◽  
pp. 61-63
Author(s):  
Feng Sun ◽  
Wei Ru Zhang ◽  
Ting Yan Tian ◽  
Xiang Hong Teng ◽  
Min Chao Ru ◽  
...  

The sections of Φ55mm silicon nitride balls, sintered by gas pressure sintering were analyzed. The results show that temperature gradient during of the sintering process from the surface to the core of large size silicon nitride balls occurred because of the lower thermal conductivity of Si3N4. With the diameter increasing, the temperature gradient was more visible. The impurity of raw materials, such as free Si, free C and other metal oxides, like the SiO2 could produce gas, such as SiO, CO and so on, during the sintering process through the thermodynamic analysis. The producing gas exhausted more difficultly with the diameter of silicon nitride balls increasing. These factors were the most important to the defects of large size silicon nitride balls during the sintering process and made cracks and crescent on the surface of balls.


1990 ◽  
Vol 73 (8) ◽  
pp. 2441-2445 ◽  
Author(s):  
M. Mitomo ◽  
M. Tsutsumi ◽  
H. Tanaka ◽  
S. Uenosono ◽  
F. Saito

1992 ◽  
Vol 100 (1162) ◽  
pp. 826-829 ◽  
Author(s):  
Naoto HIROSAKI ◽  
Motohide ANDO ◽  
Yoshio AKIMUNE ◽  
Mamoru MITOMO

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