Effect of Power Density on the Electrochemical Properties of Undoped Amorphous Carbon (a‐C) Thin Films

2019 ◽  
Vol 31 (4) ◽  
pp. 746-755 ◽  
Author(s):  
Tommi Palomäki ◽  
Miguel A. Caro ◽  
Niklas Wester ◽  
Sami Sainio ◽  
Jarkko Etula ◽  
...  
RSC Advances ◽  
2018 ◽  
Vol 8 (46) ◽  
pp. 26356-26363 ◽  
Author(s):  
Jarkko Etula ◽  
Niklas Wester ◽  
Sami Sainio ◽  
Tomi Laurila ◽  
Jari Koskinen

Surface iron levels as low as 0.4 at% (XPS) can considerably change the electrochemical properties of initially inert carbon surfaces.


Author(s):  
Jarkko Etula ◽  
Niklas Wester ◽  
Touko Liljeström ◽  
Sami Sainio ◽  
Tommi Palomäki ◽  
...  

2017 ◽  
Vol 225 ◽  
pp. 1-10 ◽  
Author(s):  
Tommi Palomäki ◽  
Niklas Wester ◽  
Miguel A. Caro ◽  
Sami Sainio ◽  
Vera Protopopova ◽  
...  

Author(s):  
David A. Muller

The sp2 rich amorphous carbons have a wide variety of microstructures ranging from flat sheetlike structures such as glassy carbon to highly curved materials having similar local ordering to the fullerenes. These differences are most apparent in the region of the graphite (0002) reflection of the energy filtered diffracted intensity obtained from these materials (Fig. 1). All these materials consist mainly of threefold coordinated atoms. This accounts for their similar appearance above 0.8 Å-1. The fullerene curves (b,c) show a string of peaks at distance scales corresponding to the packing of the large spherical and oblate molecules. The beam damaged C60 (c) shows an evolution to the sp2 amorphous carbons as the spherical structure is destroyed although the (220) reflection in fee fcc at 0.2 Å-1 does not disappear completely. This 0.2 Å-1 peak is present in the 1960 data of Kakinoki et. al. who grew films in a carbon arc under conditions similar to those needed to form fullerene rich soots.


2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.


2009 ◽  
Vol 106 (7) ◽  
pp. 073305 ◽  
Author(s):  
Bhavin N. Jariwala ◽  
Cristian V. Ciobanu ◽  
Sumit Agarwal

2005 ◽  
Vol 87 (16) ◽  
pp. 161915 ◽  
Author(s):  
David A. Czaplewski ◽  
J. P. Sullivan ◽  
T. A. Friedmann ◽  
J. R. Wendt

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