SPICE-aided modelling of dc characteristics of power bipolar transistors with self-heating taken into account

2009 ◽  
Vol 22 (6) ◽  
pp. 422-433 ◽  
Author(s):  
Janusz Zarębski ◽  
Krzysztof Górecki
Keyword(s):  
Bipolar Transistors ◽  
Self Heating ◽  
Dc Characteristics

Focused Ion Beam Irradiation Induced Damages on CMOS and Bipolar Technologies

1998 ◽  
Author(s):  
J. Benbrik ◽  
G. Rolland ◽  
P. Perdu ◽  
B. Benteo ◽  
M. Casari ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electronic Devices ◽  
Complete Characterization ◽  
Bipolar Transistors ◽  
Ion Beam Irradiation ◽  
Physical Mechanisms ◽  
Dc Characteristics ◽  
Electrical Degradation ◽  
Physical Phenomena

Abstract Focused Ion Beam is commonly used for IC repairs and modifications. However, FIB operation may also induce a damaging impact which can takes place far from the working area due to the charge-up phenomenon. A complete characterization joined to an in-depth understanding of the physical phenomena arising from FIB irradiation is therefore necessary to take into account spurious FIB induced effects and to enhance the success of FIB modifications. In this paper, we present the effects of FIB irradiation on the electrical DC performances of different electronic devices such as nMOS and pMOS transistors, CMOS inverters, PN junctions and bipolar transistors. From the observed behavior of the DC characteristics evolution of the devices, some suggestions about physical mechanisms inducing the electrical degradation are proposed.

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