Lattice parameter determination by coincidental multi-beam X-ray diffraction

2009 ◽  
Vol 206 (8) ◽  
pp. 1699-1703 ◽  
Author(s):  
Mariana Borcha ◽  
Igor Fodchuk ◽  
Igor Krytsun
Keyword(s):  
Lattice Parameter ◽  
Parameter Determination ◽  
X Ray Diffraction ◽  
X Ray

Problems Associated with Kα Doublet in Residual Stress Measurements

1979 ◽  
Vol 23 ◽  
pp. 333-339
Author(s):  
S. K. Gupta ◽  
B. D. Cullity
Keyword(s):  
Residual Stress ◽  
Silicon Powder ◽  
Lattice Parameter ◽  
Diffraction Peak ◽  
Parameter Determination ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analysis Techniques ◽  
The Difference ◽  
Similar Accuracy

Since the measurement of residual stress by X-ray diffraction techniques is dependent on the difference in angle of a diffraction peak maximum when the sample is examined consecutively with its surface at two different angles to the diffracting planes, it is important that these diffraction angles be obtained precisely, preferably with an accuracy of ± 0.01 deg. 2θ. Similar accuracy is desired in precise lattice parameter determination. In such measurements, it is imperative that the diffractometer be well-aligned. It is in the context of diffractometer alignment with the aid of a silicon powder standard free of residual stress that the diffraction peak analysis techniques described here have been developed, preparatory to residual stress determinations.

High-precision absolute lattice parameter determination of SrTiO3, DyScO3 and NdGaO3 single crystals

2012 ◽  
Vol 68 (1) ◽  
pp. 8-14 ◽  
Author(s):  
Martin Schmidbauer ◽  
Albert Kwasniewski ◽  
Jutta Schwarzkopf
Keyword(s):  
High Resolution ◽  
High Precision ◽  
Room Temperature ◽  
Systematic Errors ◽  
Lattice Parameter ◽  
Parameter Determination ◽  
X Ray Diffraction ◽  
X Ray ◽  
Bond Method

The lattice parameters of three perovskite-related oxides have been measured with high precision at room temperature. An accuracy of the order of 10−5 has been achieved by applying a sophisticated high-resolution X-ray diffraction technique which is based on the modified Bond method. The results on cubic SrTiO3 [a = 3.905268 (98) Å], orthorhombic DyScO3 [a = 5.442417 (54), b = 5.719357 (52) and c = 7.904326 (98) Å], and orthorhombic NdGaO3 [a = 5.428410 (54), b = 5.498407 (55) and c = 7.708878 (95) Å] are discussed in view of possible systematic errors as well as non-stoichiometry in the crystals.

Lattice Parameter Determination of Textured Co81−xCr15PtxTa4 Thin Films

1999 ◽  
Vol 562 ◽  
Author(s):  
B. Lu ◽  
S. D. Harkness ◽  
W. A. Lewis ◽  
D. E. Laughlin ◽  
D. N. Lambeth
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Lattice Parameter ◽  
Parameter Determination ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vegard’S Law ◽  
Variation Rate ◽  
Sputter Deposited

ABSTRACTThe thin films Co81−xCr15PtxTa4 with (0002) crystallographic texture have been sputter deposited with and without substrate bias. The lattice parameter of the thin films has been determined by a combination of x-ray diffraction and electron diffraction techniques. The resolution of the electron diffraction was enhanced by a digital imaging technique. The variation rate of the a lattice parameter with Pt content is consistent with Vegard's law. The change in the c lattice parameter is much greater than what is expected from Vegard's law.

scholarly journals Growth of sillenite Bi12FeO20 single crystals: structural, thermal, optical, photocatalytic features and first principle calculations

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Durga Sankar Vavilapalli ◽  
Ambrose A. Melvin ◽  
F. Bellarmine ◽  
Ramanjaneyulu Mannam ◽  
Srihari Velaga ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Diffraction Method ◽  
Lattice Parameter ◽  
First Principle ◽  
X Ray Diffraction ◽  
X Ray ◽  
First Principle Calculations ◽  
Photodegradation Efficiency

AbstractIdeal sillenite type Bi12FeO20 (BFO) micron sized single crystals have been successfully grown via inexpensive hydrothermal method. The refined single crystal X-ray diffraction data reveals cubic Bi12FeO20 structure with single crystal parameters. Occurrence of rare Fe4+ state is identified via X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The lattice parameter (a) and corresponding molar volume (Vm) of Bi12FeO20 have been measured in the temperature range of 30–700 °C by the X-ray diffraction method. The thermal expansion coefficient (α) 3.93 × 10–5 K−1 was calculated from the measured values of the parameters. Electronic structure and density of states are investigated by first principle calculations. Photoelectrochemical measurements on single crystals with bandgap of 2 eV reveal significant photo response. The photoactivity of as grown crystals were further investigated by degrading organic effluents such as Methylene blue (MB) and Congo red (CR) under natural sunlight. BFO showed photodegradation efficiency about 74.23% and 32.10% for degrading MB and CR respectively. Interesting morphology and microstructure of pointed spearhead like BFO crystals provide a new insight in designing and synthesizing multifunctional single crystals.

scholarly journals Measurements by x-ray diffraction of the temperature dependence of lattice parameter and crystallite size for isostatically-pressed graphite

Carbon Trends ◽  
2021 ◽  
pp. 100071
Author(s):  
Keith R. Hallam ◽  
James Edward Darnbrough ◽  
Charilaos Paraskevoulakos ◽  
Peter J. Heard ◽  
T. James Marrow ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Crystallite Size ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

Phase selection in precursor-derived yttrium aluminum garnet and related Al2O3–Y2O3 compositions

2005 ◽  
Vol 20 (4) ◽  
pp. 1017-1025 ◽  
Author(s):  
Ashutosh S. Gandhi ◽  
Carlos G. Levi
Keyword(s):  
Heat Treatment ◽  
Yttrium Aluminum Garnet ◽  
Lattice Parameter ◽  
Defect Structures ◽  
X Ray Diffraction ◽  
Phase Selection ◽  
X Ray ◽  
Yttrium Aluminum ◽  
Rich Side ◽  
Nitrate Solutions

Al2O3–Y2O3 powders were synthesized in the range of 25–55% Y2O3 by reverse coprecipitation of nitrate solutions. All starting powders were amorphous and formed primary yttrium aluminum garnet (YAG) upon crystallization. X-ray diffraction detected only garnet in compositions of 30–40% Y2O3 after heat treatment at 1250 °C. Compositions of 45–55% Y2O3 established a metastable YAG + Y4Al2O9 microstructure. The YAG phase field was metastably extended away from its stoichiometry, as indicated by a systematic increase in lattice parameter with Y2O3 content. Although some Al2O3 enrichment was achieved, YAG appears to tolerate greater off-stoichiometry on the Y2O3-rich side. Possible defect structures accommodating the solubility extension were examined. Phase selection results indicate that compositional inhomogeneity is not the only reason behind the appearance of hexagonal YAlO3, which is frequently reported during YAG synthesis.

scholarly journals Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams

2013 ◽  
Vol 46 (4) ◽  
pp. 887-892 ◽  
Author(s):  
Genziana Bussone ◽  
Rüdiger Schott ◽  
Andreas Biermanns ◽  
Anton Davydok ◽  
Dirk Reuter ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Lattice Spacing ◽  
Molecular Beam ◽  
Grazing Incidence ◽  
Lattice Parameter ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Nanowires

Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au-implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice spacing in the substrate compared with the expected unstrained value. This suggests the presence of a compressed region due to Au implantation.

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