scholarly journals Impact of Reduced Gate‐to‐Source Spacing on Indium Phosphide High Electron Mobility Transistor Performance

2020 ◽  
pp. 2000191
Author(s):  
Diego Calvo Ruiz ◽  
Daxin Han ◽  
Giorgio Bonomo ◽  
Tamara Saranovac ◽  
Olivier Ostinelli ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

The Influence of Lattice Mismatch on Indium Phosphide Based High Electron Mobility Transistor (HEMT) Structures Observed in High Resolution Monochromatic Synchrotron X-Radiation Diffraction Imaging

1992 ◽  
Vol 281 ◽  
Author(s):  
Bruce Steiner ◽  
James Comas ◽  
Wen Tseng ◽  
Uri Laor
Keyword(s):  
High Resolution ◽  
Indium Phosphide ◽  
Electron Mobility ◽  
Lattice Mismatch ◽  
High Electron Mobility Transistor ◽  
Misfit Dislocations ◽  
High Electron ◽  
High Electron Mobility ◽  
Local Lattice ◽  
Monochromatic Synchrotron

ABSTRACTThe formation of mismatch dislocations in layered semiconductor structures was found recently in high resolution monochromatic synchrotron x-radiation diffraction images to be correlated with characteristics of the substrate as well as with the layer thickness and degree of lattice mismatch of non pseudomorphic layers.1,2 We have now extended these studies to examine the accommodation to strain as a function of lattice mismatch in a series of high electron mobility transistor (HEMT) structures grown by molecular beam epitaxy (MBE) on indium phosphide substrates.Five distinct types of irregularity are observed: 1) lattice warping, 2) the formation of a nonpseudomorphic layer, 3) the formation of extended arrays of linear mismatch dislocations at the interface between the substrate and a nonpseudomorphic layer, 4) the formation of oval regions of tweed-like local lattice variation imbedded among these arrays, and 5) extended tweed-like local lattice variation over large peripheral areas in which the formation of straight mismatch dislocation arrays is not observed.Warping of the lattice is found in nearly all layered structures. A distinct layer with a different lattice parameter but without visible misfit dislocations is formed with a mismatch of 0.27 %. With increase of the mismatch to 0.5 %, the other three forms of accommodation appear in distinct regions of the structure: arrays of <011> mismatch dislocations; oval regions of tweed-like irregularity, oriented in the [011] direction; and peripheral regions of extended tweed-like local lattice variation.

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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