Peculiarities of Radiation Defect Formation and Annealing in n-Si Due to Their Interaction with Each Other and Defect Clusters

1984 ◽  
Vol 84 (2) ◽  
pp. 457-464 ◽  
Author(s):  
P. F. Lvgakov ◽  
V. V. Lukyanitsa
1994 ◽  
Vol 132 (4) ◽  
pp. 371-376 ◽  
Author(s):  
A. O. Matkovskii ◽  
D. Yu. Sugak ◽  
Ya. V. Burak ◽  
G. I. Malovichko ◽  
V. G. Grachov

2014 ◽  
Vol 9 (3) ◽  
Author(s):  
Anatoly Ivanovich Kupchishin ◽  
Evgeniy Vladimirovich Shmygalev ◽  
Tatyana Alexandrovna Shmygaleva ◽  
Almaz Binuruli Jorabayev

1979 ◽  
Vol 42 (3-4) ◽  
pp. 249-251 ◽  
Author(s):  
O. Yu. Borkovskaya ◽  
N. L. Dmitruk ◽  
R. V. Konakova ◽  
V. G. Litovchenko ◽  
Yu. A. Tkhorik ◽  
...  

1985 ◽  
Vol 87 (1) ◽  
pp. 15-22
Author(s):  
V. I. Kuznetsov ◽  
P. F. Lugakov ◽  
V. V. Shusha

Author(s):  
Satoshi Miyashiro ◽  
Satoshi Fujita ◽  
Mitsuhiro Itakura ◽  
Taira Okita

We conducted molecular dynamics (MD) simulations to analyze the strain influence on defect formation and orientation. Collision cascade damage was initiated under uniaxial applied strain with a PKA energy of 10 keV. The number of residual defects increased with applied strain because of the enhanced formation of larger defect cluster. We also applied uniaxial strain to the simulation cell which included an interstitial cluster and detected the change in its direction. The probability of a change in the defect cluster direction was significantly higher under strain. Results further showed that the probability of the change in direction is higher with smaller defect clusters, and that it is extremely low with clusters larger than a certain size.


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