Investigation of Electrical Conductivity and Hall Effect in GaSe Single Crystals

1966 ◽  
Vol 17 (2) ◽  
pp. K237-K240 ◽  
Author(s):  
F. I. Ismailov ◽  
G. A. Akhundov ◽  
O. R. Vernich
2019 ◽  
Vol 45 (12) ◽  
pp. 1277-1280
Author(s):  
I. I. Abbasov ◽  
Sh. S. Ismailov ◽  
J. I. Huseynov ◽  
V. A. Abdurahmanova

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.


2021 ◽  
Vol 3 (2) ◽  
Author(s):  
Yu Liu ◽  
Zhixiang Hu ◽  
Eli Stavitski ◽  
Klaus Attenkofer ◽  
C. Petrovic

1969 ◽  
Vol 32 (1) ◽  
pp. 243-246 ◽  
Author(s):  
J. L. Alty ◽  
J. Stringer
Keyword(s):  

2011 ◽  
Vol 53 (12) ◽  
pp. 2424-2430 ◽  
Author(s):  
V. N. Andreev ◽  
V. A. Klimov

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