Dynamical Screening, Collective Excitations, and Electron–Phonon Interaction in Heterostructures and Semiconductor Quantum Wells. General Theory

1986 ◽  
Vol 138 (1) ◽  
pp. 197-217 ◽  
Author(s):  
L. Wendler ◽  
R. Pechstedt
Keyword(s):  
General Theory ◽  
Quantum Wells ◽  
Collective Excitations ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Semiconductor Quantum Wells ◽  
Dynamical Screening

PHONON BROADENING OF IMPURITY SPECTRAL LINES: II. APPLICATION TO SILICON

1963 ◽  
Vol 41 (11) ◽  
pp. 1823-1835 ◽  
Author(s):  
Robert Barrie ◽  
Kyoji Nishikawa
Keyword(s):  
General Theory ◽  
Spectral Lines ◽  
Deformation Potential ◽  
Phonon Interaction ◽  
Potential Description ◽  
Electron Phonon Interaction ◽  
Shallow Impurity ◽  
Hydrogenic Model ◽  
Numerical Estimations

The general theory of the phonon broadening of impurity spectral lines discussed in an earlier paper is applied to shallow impurity levels in silicon. With the use of a modified hydrogenic model and a deformation potential description of the electron–phonon interaction, expressions are obtained for typical contributions to the half-widths. Some numerical estimations are made for both acceptor and donor cases and are compared with experiment.

scholarly journals Многократное изменение электрон-фононного взаимодействия в квантовых ямах с диэлектрически различными барьерами

2022 ◽  
Vol 56 (1) ◽  
pp. 101
Author(s):  
А.Ю. Маслов ◽  
О.В. Прошина
Keyword(s):  
Quantum Wells ◽  
Charged Particles ◽  
Strong Interactions ◽  
Asymmetric Structure ◽  
Optical Phonons ◽  
Phonon Modes ◽  
Phonon Interaction ◽  
Barrier Materials ◽  
Electron Phonon Interaction ◽  
Order Of Magnitude

Abstract The specific features of the interaction of charged particles with polar optical phonons have been studied theoretically for quantum wells with the barriers that are asymmetric in their dielectric properties. It is shown that the interaction with interface phonon modes makes the greatest contribution in narrow quantum wells. The parameters of the electron-phonon interaction were found for the cases of different values of the phonon frequencies in the barrier materials. It turned out that a significant (by almost an order of magnitude) change in the parameters of the electron-phonon interaction can occur in such structures. This makes it possible, in principle, to trace the transition from weak to strong interactions in quantum wells of the same type but with different compositions of barrier materials. The conditions are found under which an enhancement of the electron-phonon interaction is possible in an asymmetric structure in comparison with a symmetric one with the barriers of the same composition.

Study of electron-phonon interaction in quantum wells using optically excited nonequilibrium population of phonons

1993 ◽  
Vol 13 (2) ◽  
pp. 203 ◽  
Author(s):  
Tobias Ruf ◽  
Keith Wald ◽  
Peter Y. Yu ◽  
K.T. Tsen ◽  
H. Morkoç ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Phonon Interaction ◽  
Electron Phonon Interaction
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