Absorption and Optical Gain Spectra and Band Gap Renormalization of Highly Excited Quantum Well Systems

1990 ◽  
Vol 159 (1) ◽  
pp. 117-124 ◽  
Author(s):  
C. Ell ◽  
H. Haug
Keyword(s):  
Quantum Well ◽  
Band Gap ◽  
Optical Gain ◽  
Gain Spectra

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

Optical Gain Spectra in InGaN/GaN Quantum Wells with the Compositional Fluctuations

1998 ◽  
Vol 537 ◽  
Author(s):  
Takeshi Uenoyama
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Gain ◽  
Inhomogeneous Broadening ◽  
Localized States ◽  
Quantum Well Structures ◽  
Potential Fluctuation ◽  
Quantum Disk ◽  
Gain Spectra

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.

Optical gain spectra of 1.55 μm GaAs/GaN.58yAs1-1.58yBiy/GaAs single quantum well

2017 ◽  
Vol 102 ◽  
pp. 141-146 ◽  
Author(s):  
I. Guizani ◽  
C. Bilel ◽  
M.M. Habchi ◽  
A. Rebey
Keyword(s):  
Quantum Well ◽  
Optical Gain ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Gain Spectra

Inhomogeneously broadened optical gain spectra of InGaN quantum well laser diodes

2008 ◽  
Vol 5 (6) ◽  
pp. 2126-2128 ◽  
Author(s):  
Kazunobu Kojima ◽  
Mitsuru Funato ◽  
Yoichi Kawakami ◽  
Harald Braun ◽  
Ulrich Schwarz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Optical Gain ◽  
Quantum Well Laser ◽  
Gain Spectra

scholarly journals Optical gain spectra of unstrained graded GaAs/AlxGa1−xAs quantum well laser

2013 ◽  
Vol 377 (7) ◽  
pp. 582-586 ◽  
Author(s):  
E.L. Albuquerque ◽  
U.L. Fulco ◽  
M.S. Vasconcelos ◽  
P.W. Mauriz
Keyword(s):  
Quantum Well ◽  
Optical Gain ◽  
Quantum Well Laser ◽  
Gain Spectra

Theory of Direct-Transition Optical Gain in a Novel n+ Doping Tensile-Strained Ge/GeSiSn-on-Si Quantum well Laser

2013 ◽  
Vol 746 ◽  
pp. 197-202 ◽  
Author(s):  
W.J. Fan
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Dispersion Curves ◽  
Doping Effect ◽  
Direct Transition ◽  
Quantum Well Laser ◽  
Gain Spectra

The band structure and optical gain of a novel n+ doping tensile-strained Ge/GeSiSn quantum well are investigated by using an 8-band k·p method. The doping effect in Ge quantum well and the effect of the carrier leakage into L valley on the optical gain will also be considered. The E-k dispersion curves and optical gain spectra will be obtained and discussed.

scholarly journals Optical Gain Spectra in InGaN/GaN Quantum Wells with the Compositional Fluctuations

1999 ◽  
Vol 4 (S1) ◽  
pp. 112-117 ◽  
Author(s):  
Takeshi Uenoyama
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Gain ◽  
Inhomogeneous Broadening ◽  
Localized States ◽  
Quantum Well Structures ◽  
Potential Fluctuation ◽  
Quantum Disk ◽  
Gain Spectra

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.

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