Self organized growth of doped vertical quantum wells for normal incidence intersubband transitions

1996 ◽  
Vol 20 (1) ◽  
pp. 125-129 ◽  
Author(s):  
V. Berger ◽  
G. Vermeire ◽  
P. Demeester ◽  
C. Weisbuch
2013 ◽  
Vol 25 (38) ◽  
pp. 385301 ◽  
Author(s):  
B Sbierski ◽  
G F Quinteiro ◽  
P I Tamborenea

1995 ◽  
Vol 67 (23) ◽  
pp. 3462-3464 ◽  
Author(s):  
L. Wu ◽  
P. Boucaud ◽  
J.‐M. Lourtioz ◽  
F. H. Julien ◽  
I. Sagnes ◽  
...  

1996 ◽  
Vol 450 ◽  
Author(s):  
M. Helm ◽  
P. Kruck ◽  
T. Fromherz ◽  
M. Seto ◽  
G. Bauer ◽  
...  

ABSTRACTA survey is given about the potential use of Si/SiGe heterostructures for applications in the mid-infrared spectral range. We discuss theoretical foundations and experiments of intersubband absorption in p-type Si/SiGe quantum wells and show that due to the complex valence-band structure, normal-incidence absorption can be observed. On the basis of these quantum wells, mid-infrared detectors were fabricated and characterized in terms of responsivity, dark current and detectivity. In asymmetric, compositionally stepped quantum wells second harmonic generation of CO2 laser radiation has been demonstrated.


1987 ◽  
Vol 48 (C5) ◽  
pp. C5-179-C5-182
Author(s):  
K. BAJEMA ◽  
R. MERLIN ◽  
F.-Y. JUANG ◽  
S.-C. HONG ◽  
J. SINGH ◽  
...  

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