Reversible Electrical Switching Phenomena in Disordered Structures

1991 ◽  
pp. 11-13 ◽  
Author(s):  
Stanford R. Ovshinsky
Keyword(s):  
Electrical Switching ◽  
Disordered Structures

scholarly journals 7-Alkoxy-appended coumarin derivatives: synthesis, photo-physical properties, aggregation behaviours and current–voltage (I–V) characteristic studies on thin films

RSC Advances ◽  
2021 ◽  
Vol 11 (17) ◽  
pp. 10212-10223
Author(s):  
Abhijit Rudra Paul ◽  
Bapi Dey ◽  
Sudip Suklabaidya ◽  
Syed Arshad Hussain ◽  
Swapan Majumdar
Keyword(s):  
Thin Films ◽  
Carboxylic Acid ◽  
Physical Properties ◽  
Chemical Characteristics ◽  
Coumarin Derivatives ◽  
Design Synthesis ◽  
Electrical Switching ◽  
Physico Chemical ◽  
Current Voltage

In this article, we demonstrate the design, synthesis and physico-chemical characteristics, including electrical switching behaviours of long alkoxy-appended coumarin carboxylate/carboxylic acid in thin films.

NH4AlF4 : Determination of the ordered and disordered structures by neutron powder profile refinement

1982 ◽  
Vol 17 (3) ◽  
pp. 391-397 ◽  
Author(s):  
A. Bulou ◽  
A. eblé ◽  
A.W. Hewat ◽  
J.L. Fourquet
Keyword(s):  
Disordered Structures ◽  
Profile Refinement

Physical Properties of SiC

MRS Bulletin ◽  
1997 ◽  
Vol 22 (3) ◽  
pp. 25-29 ◽  
Author(s):  
W.J. Choyke ◽  
G. Pensl
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Physical Properties ◽  
Chemical Bond ◽  
High Power ◽  
National Program ◽  
High Radiation ◽  
Electrical Switching ◽  
Oil Drilling ◽  
Drilling Technology

While silicon carbide has been an industrial product for over a century, it is only now emerging as the semiconductor of choice for high-power, high-temperature, and high-radiation environments. From electrical switching and sensors for oil drilling technology to all-electric airplanes, SiC is finding a place which is difficult to fill with presently available Si or GaAs technology. In 1824 Jöns Jakob Berzelius published a paper which suggested there might be a chemical bond between the elements carbon and silicon. It is a quirk of history that he was born in 1779 in Linköping, Sweden where he received his early education, and now, 172 years later, Linkoping University is the center of a national program in Sweden to study the properties of SiC as a semiconductor.

Sign in / Sign up

Export Citation Format

Share Document