Strain Control of Domain Structures in Ferroelectric Thin Films: Applications of Phase-Field Method

2020 ◽  
pp. 1213-1230
Author(s):  
Jian-Jun Wang ◽  
Long-Qing Chen
2019 ◽  
Vol 49 (1) ◽  
pp. 127-152 ◽  
Author(s):  
Jian-Jun Wang ◽  
Bo Wang ◽  
Long-Qing Chen

Understanding mesoscale ferroelectric domain structures and their switching behavior under external fields is critical to applications of ferroelectrics. The phase-field method has been established as a powerful tool for probing, predicting, and designing the formation of domain structures under different electromechanical boundary conditions and their switching behavior under electric and/or mechanical stimuli. Here we review the basic framework of the phase-field model of ferroelectrics and its applications to simulating domain formation in bulk crystals, thin films, superlattices, and nanostructured ferroelectrics and to understanding macroscopic and local domain switching under electrical and/or mechanical fields. We discuss the possibility of utilizing the structure-property relationship learned from phase-field simulations to design high-performance relaxor piezoelectrics and electrically tunable thermal conductivity. The review ends with a summary of and an outlook on the potential new applications of the phase-field method of ferroelectrics.


2010 ◽  
Vol 77 (4) ◽  
Author(s):  
Antonios Kontsos ◽  
Chad M. Landis

A computational model developed based on the phase-field approach is used to model domain structures in ferroelectric thin films and to quantify the effects of strain and applied electric field on the microstructural evolution, and on the induced dielectric, electrostrictive, and piezoelectric film properties. Theoretically predicted vortex-like polydomain and experimentally observed bidomain and monodomain film morphologies are modeled using the continuum phase-field approach. A nonlinear finite element method is used to solve the boundary value problems relevant to ferroelectric thin films. The computed results agree with the Kittel law for specific ranges of film strain. Simulations that track the domain structure evolution and compute ferroelectric thin film properties given the film dimensions and the imposed electromechanical boundary conditions are also reported.


2001 ◽  
Vol 78 (24) ◽  
pp. 3878-3880 ◽  
Author(s):  
Y. L. Li ◽  
S. Y. Hu ◽  
Z. K. Liu ◽  
L. Q. Chen

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