Electronic Structure of Underdoped Superconductors and Related Mott Insulators

1999 ◽  
pp. 144-151 ◽  
Author(s):  
Zhi-Xun Shen
Keyword(s):  
Electronic Structure ◽  
Mott Insulators

TEMPERATURE-DEPENDENT ELECTRONIC STRUCTURE AND MAGNETIC BEHAVIOUR OF MOTT INSULATORS

1993 ◽  
Vol 07 (01n03) ◽  
pp. 333-336
Author(s):  
W. NOLTING ◽  
L. HAUNERT ◽  
G. BORSTEL
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Theoretical Model ◽  
Transition Metal ◽  
Magnetic Behaviour ◽  
Mott Insulators ◽  
Temperature Dependent ◽  
Electronic And Magnetic Properties ◽  
Coulomb Correlations

The temperature-dependent electronic and magnetic properties of transition metal monoxides are calculated by use of a theoretical model which takes into account strong 3d Coulomb correlations and 2p-3d hybridization.

Temperature-dependent electronic structure and magnetic behavior of Mott insulators

1992 ◽  
Vol 46 (8) ◽  
pp. 4426-4445 ◽  
Author(s):  
W. Nolting ◽  
L. Haunert ◽  
G. Borstel
Keyword(s):  
Electronic Structure ◽  
Magnetic Behavior ◽  
Mott Insulators ◽  
Temperature Dependent

Electronic structure of Mott insulators

1977 ◽  
Vol 26 (5) ◽  
pp. 651-808 ◽  
Author(s):  
B.H. Brandow
Keyword(s):  
Electronic Structure ◽  
Mott Insulators

scholarly journals POSSIBLE ELECTRONIC STRUCTURE OF DOMAIN WALLS IN MOTT INSULATORS

1996 ◽  
Vol 10 (17) ◽  
pp. 2125-2136 ◽  
Author(s):  
CHETAN NAYAK ◽  
FRANK WILCZEK
Keyword(s):  
Electronic Structure ◽  
High Temperature ◽  
Low Temperature ◽  
Spatial Structure ◽  
Doping Level ◽  
Domain Walls ◽  
High Temperature Superconductors ◽  
Minimal Length ◽  
Mott Insulators ◽  
Quantum Numbers

We discuss the quantum numbers of domain walls of minimal length induced by doping Mott insulators, carefully distinguishing between holon and hole walls. We define a minimal wall hypothesis that uniquely correlates the observed spatial structure with the doping level for the low-temperature commensurate insulating state of La 2−x Ba x CuO 4 and related materials at x = ⅛. We remark that interesting walls can be supported not only by conventional antiferromagnetic but also by orbital antiferromagnetic (staggered flux phase, d-density) bulk order. We speculate on the validity of the minimal wall hypothesis more generally, and argue that it plausibly explains several of the most striking anomalous features of the cuprate high-temperature superconductors.

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

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