Observations of polyaniline surface morphology modification during doping and de-doping using atomic force microscopy

1994 ◽  
Vol 29 (16) ◽  
pp. 4200-4204 ◽  
Author(s):  
Like Xie ◽  
L. J. Buckley ◽  
J. Y. Josefowicz
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Morphology Modification ◽  
Surface Morphology Modification

Surface morphology of As-deposited and laser-damaged dielectric mirror coatings studied in-situ by atomic force microscopy

1992 ◽  
Author(s):  
Mark R. Kozlowski ◽  
Michael C. Staggs ◽  
Mehdi Balooch ◽  
Robert J. Tench ◽  
Wigbert J. Siekhaus
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Dielectric Mirror ◽  
Atomic Force

Surface morphology studies on sublimation grown GaN by atomic force microscopy

1999 ◽  
Vol 200 (3-4) ◽  
pp. 348-352 ◽  
Author(s):  
R.S Qhalid Fareed ◽  
S Tottori ◽  
K Nishino ◽  
S Sakai
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force

Chromic Polydiacetylene Single Crystals: Atomic Force Microscopy Studies

1995 ◽  
Vol 413 ◽  
Author(s):  
V. Shivshankar ◽  
C. Sung ◽  
J. Kumar ◽  
S. K. Tripathy ◽  
D. J. Sandman
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Single Crystals ◽  
Ambient Conditions ◽  
Free Standing ◽  
Force Microscopy ◽  
Sensor Performance ◽  
Atomic Force ◽  
Variable Surface

ABSTRACTWe have studied the surface morphology of free standing single crystals of thermochromic polydiacetylenes (PDAs), namely, ETCD and IPUDO (respectively, the ethyl and isopropyl urethanes of 5,7-dodecadiyn-1,12-diol), by Atomic Force Microscopy (AFM) under ambient conditions. Micron scale as well as molecularly resolved images were obtained. The micron scale images indicate a variable surface, and the molecularly resolved images show a well defined 2-D lattice that is interpreted in terms of molecular models and known crystallographic data. Thereby information about surface morphology, which is crucial to potential optical device or chromic sensor performance is available. We also report the observation of a “macroscopic shattering” of the IPUDO monomer crystal during in-situ UV polymerization studies.

MICROCRACKS IN ~ 100 MeV Si7+-ION-IRRADIATED p-SILICON SURFACES

2004 ◽  
Vol 11 (03) ◽  
pp. 265-269
Author(s):  
O. P. SINHA ◽  
P. C. SRIVASTAVA ◽  
V. GANESAN
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Target Surface ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Induced Stress

The p-silicon surfaces have been irradiated with ~ 100 MeV Si 7+ions to a fluence of 2.2×1013 ions cm -2, and surface morphology has been studied with atomic force microscopy (AFM). Interesting features of cracks of ~ 47 nm in depth and ~ 103 nm in width on the irradiated surfaces have been observed. The observed features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface.

scholarly journals Surface Morphology of Polyphenylsilsesquioxanes/Hydroxyl-Functionalized Polystyrene Blends Investigated by Atomic Force Microscopy

2000 ◽  
Vol 32 (7) ◽  
pp. 531-536 ◽  
Author(s):  
Dong Wook Kim ◽  
Seung Sang Hwang ◽  
Soon Man Hong ◽  
Eung-Chan Lee
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Optical force microscopy: combining light with atomic force microscopy for nanomaterial identification

Nanophotonics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1659-1671
Author(s):  
Nusrat Jahan ◽  
Hanwei Wang ◽  
Shensheng Zhao ◽  
Arkajit Dutta ◽  
Hsuan-Kai Huang ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Spatial Resolution ◽  
Optical Force ◽  
Scanning Probe ◽  
Force Microscopy ◽  
Atomic Force ◽  
Recent Advances ◽  
Spectroscopic Information

AbstractScanning probe techniques have evolved significantly in recent years to detect surface morphology of materials down to subnanometer resolution, but without revealing spectroscopic information. In this review, we discuss recent advances in scanning probe techniques that capitalize on light-induced forces for studying nanomaterials down to molecular specificities with nanometer spatial resolution.

Investigation Of Nucleation And Initial Stage Of Gan Growth By Atomic Force Microscopy And X-Ray Diffraction

1997 ◽  
Vol 482 ◽  
Author(s):  
P. W. Yip ◽  
S.-Q. Wang ◽  
A. J. Drehman ◽  
L. D. Zhu ◽  
P. E. Norris
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Deposition Temperature ◽  
Yellow Luminescence ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Initial Stage

AbstractThe nucleation and initial stage of GaN growth on sapphire was investigated by atomic force microscopy, X-ray diffraction and photoluminescence. A 15 to 30 nm thick GaN buffer layer deposited at proper conditions was extremely smooth and nearly amorphous. Proper post deposition annealing resulted in the buffer crystallized. The buffer layer deposition temperature, thickness and annealing time and temperature must be coordinated. Low deposition temperature and/or insufficient annealing of the buffer results in a GaN wafer which has fine spiking surface morphology with an RMS of 3.4 nm for 1.4 μm wafer, strong yellow luminescence and wide xray rocking curve FWHM. High deposition temperature, longer crystallization time, and a low growth rate results in a wafer which exhibits strong band edge luminescence without noticeable yellow luminescence, and a narrow (002) diffraction rocking curve. However, the surface morphology exhibits well developed hexagonal feature with RMS roughness of 14.3 nm for a 570 nm thick layer. X-ray rocking curve analysis revealed buffer crystallization, domain coalescence and alignment process. The FWHM of the ω–scan of GaN (101) diffraction was 1700–2000 arc seconds for 200–1400 nm wafers which indicates that the twist of the domains is not changing much with the growth.

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