Current-voltage characteristics of gallium arsenide tunnel p-n junctions irradiated by fast neutrons

1970 ◽  
Vol 13 (3) ◽  
pp. 404-407
Author(s):  
Z. M. Alekseeva ◽  
V. N. Brudnyi ◽  
M. A. Krivov ◽  
S. V. Malyanov ◽  
O. N. Khomchuk
Keyword(s):  
Gallium Arsenide ◽  
Fast Neutrons ◽  
Current Voltage ◽  
Current Voltage Characteristics

Forward current-voltage characteristics of gallium arsenide power diodes at high current densities

1988 ◽  
Vol 31 (6) ◽  
pp. 1101-1104 ◽  
Author(s):  
L.A. Delimova ◽  
Yu.V. Zhilyaev ◽  
V.Yu. Kachorovsky ◽  
M.E. Levinshtein ◽  
V.V. Rossin
Keyword(s):  
Gallium Arsenide ◽  
High Current ◽  
Power Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics

scholarly journals Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

2014 ◽  
Vol 5 ◽  
pp. 1999-2006 ◽  
Author(s):  
Domenico Melisi ◽  
Maria Angela Nitti ◽  
Marco Valentini ◽  
Antonio Valentini ◽  
Teresa Ligonzo ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Gallium Arsenide ◽  
Near Infrared ◽  
Electrical Characterization ◽  
Morphological Properties ◽  
Multi Wall Carbon Nanotubes ◽  
Current Voltage ◽  
Spray Technique ◽  
Temperature Deposition ◽  
Current Voltage Characteristics

In this paper, a spray technique is used to perform low temperature deposition of multi-wall carbon nanotubes on semi-insulating gallium arsenide in order to obtain photodectors. A dispersion of nanotube powder in non-polar 1,2-dichloroethane is used as starting material. The morphological properties of the deposited films has been analysed by means of electron microscopy, in scanning and transmission mode. Detectors with different layouts have been prepared and current–voltage characteristics have been recorded in the dark and under irradiation with light in the range from ultraviolet to near infrared. The device spectral efficiency obtained from the electrical characterization is finally reported and an improvement of the photodetector behavior due to the nanotubes is presented and discussed.

Changes in 8–12 μm CdxHg1−xTe photodiode arrays caused by fast neutron irradiation

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
I.O. Lysiuk ◽  
J.V. Gumenjuk-Sichevska ◽  
S.A. Dvoretsky ◽  
V.S. Varavin
Keyword(s):  
Fast Neutrons ◽  
High Concentration ◽  
Model Calculations ◽  
Long Wavelength ◽  
Current Voltage ◽  
Before And After ◽  
Photodiode Array ◽  
Current Voltage Characteristics ◽  
Photodiode Arrays ◽  
Long Wavelength Infrared

AbstractWe have measured the current-voltage characteristics of the long-wavelength infrared (LWIR) photodiode array, formed on the epitaxial CdxHg1−xTe film (x = 0.21–0.23) with a high concentration of the Shockley-Read-Hall centres, before and after irradiating it with fast neutrons (energy 1 MeV, dose 5×1013 cm−2) at room temperature. Residual changes in current-voltage characteristics, persisting after 20 days, have been identified. Model calculations indicate that the Shockley-Read-Hall centre concentration increases 2–4 times, and the carrier lifetime decreases 2–5 times after the irradiation.

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