Pressure-controlled preparation of nanocrystalline complex oxides using pulsed-laser ablation at room temperature

2003 ◽  
Vol 76 (4) ◽  
pp. 641-643 ◽  
Author(s):  
J.W. Yoon ◽  
T. Sasaki ◽  
N. Koshizaki
Keyword(s):  
Laser Ablation ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Complex Oxides ◽  
Controlled Preparation ◽  
Pressure Controlled

scholarly journals Pulsed laser ablation of complex oxides: The role of congruent ablation and preferential scattering for the film stoichiometry

2012 ◽  
Vol 101 (13) ◽  
pp. 131601 ◽  
Author(s):  
S. Wicklein ◽  
A. Sambri ◽  
S. Amoruso ◽  
X. Wang ◽  
R. Bruzzese ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Complex Oxides

Early stages of the growth of BaTiO3 thin films studied by Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 706-707
Author(s):  
M. Grant Norton ◽  
Gerald R. English ◽  
Christopher Scarfone ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
High Temperature Superconductors ◽  
Pulsed Laser ◽  
Target Material ◽  
Pulsed Laser Ablation ◽  
Cubic Phase ◽  
Transmission Electron ◽  
Tetragonal Form

Barium titanate (BaTiO3) may be used in a number of thin-film applications in electronic and optoelectronic devices. For these devices the formation of epitactic films of the correct stoichiometry and phase is essential. In particular, the tetragonal form of BaTiO3, which is stable at room temperature, exhibits ferro-, pyro- and piezoelectric properties. It is desirable to form films of the tetragonal phase directly and thus to avoid formation of either amorphous or polycrystalline material or to form material of the non-ferroelectric cubic phase. Recently two techniques, pulsed-laser ablation and reactive evaporation, have been used to form BaTiO3 thin-films. In the present study BaTiO3 thin-films have been formed using the pulsed-laser ablation technique. Pulsed-laser ablation is now widely used to produce thin-films of the high temperature superconductors and has many advantages over other techniques, in particular the formation of films which maintain the stoichiometry of the target material and by controlling the processing conditions the formation of films having defined crystalline phases.

scholarly journals Влияние бора на структуру и проводимость тонких пленок, получаемых лазерной абляцией алмаза при 700-=SUP=-o-=/SUP=-C

2018 ◽  
Vol 44 (12) ◽  
pp. 16
Author(s):  
Р.И. Романов ◽  
В.Ю. Фоминский ◽  
П.В. Зинин ◽  
И.А. Троян ◽  
Д.В. Фоминский ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Room Temperature ◽  
Diffusion Processes ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Diamond Powder ◽  
Atomic Ratio ◽  
Film Deposition ◽  
Chemical Bonds ◽  
Boron Powder

AbstractStructural features of CB_ x films obtained by pulsed laser ablation of targets made of pressed diamond powder with boron-powder additions at B/C atomic ratio of x = 0.33 have been studied. The films were deposited on heated substrates, so that diffusion processes involving C and B atoms on the surface and in the volume of films were possible. Selected conditions of film deposition ensured their effective doping with boron (0.4 ≤ x ≤ 0.6). The incorporation of B atoms was accompanied by the formation of B–C chemical bonds, whereas the formation of sp ^2 graphite bonds and their ordering in clusters with laminar packing was suppressed. The films possessed very low resistivity (~1.4 mΩ cm) at room temperature and exhibited metallic type of conductance on decreasing the temperature to 77 K.

Characterization of copper oxide deposited on α-Al2O3 by pulsed-laser ablation

1993 ◽  
Vol 51 ◽  
pp. 1152-1153
Author(s):  
M.W. Bench ◽  
K.B. Sartain ◽  
M.P. Mallamaci ◽  
C.B. Carter
Keyword(s):  
Laser Ablation ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Oxide System ◽  
Reaction Products ◽  
Adhesion Properties ◽  
Copper Aluminate ◽  
Α Al2o3

The Cu-Al-O system is of considerable interest for electronic packaging, where thin copper wires are bonded to alumina substrates. In order to optimize the adhesion properties of Cu to alumina, it has been suggested that a ternary bonding environment is necessary at the interface. In comparison to a model oxide system such as NiO/alumina, where NiO is the only stable oxide of Ni and only one phase forms during the reaction, the situation is more complex in the Cu-Al-O system. First, two oxides of copper can form with CuO stable at room temperature and Cu2O stable above 1020°C in air. In addition, two copper aluminate reaction products (CuAl2O4 and CuAlO2) can form in the Cu-Al-O system. In a previous study it was found that both form during reactions in air at 1100°C, with the relative positions of each dependent on the crystallographic orientation of the alumina substrate.

Resistivity and oxygen content of indium tin oxide films deposited at room temperature by pulsed-laser ablation

1999 ◽  
Vol 86 (2) ◽  
pp. 991-994 ◽  
Author(s):  
Y. Wu ◽  
C. H. M. Marée ◽  
R. F. Haglund ◽  
J. D. Hamilton ◽  
M. A. Morales Paliza ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Oxygen Content ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Tin Oxide Films

scholarly journals Width of Nucleation Region of Si Nanocrystal Grains Prepared by Pulsed Laser Ablation with Different Laser Fluence

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Zechao Deng ◽  
Xuexia Pang ◽  
Xuecheng Ding ◽  
Lizhi Chu ◽  
Yinglong Wang
Keyword(s):  
Laser Ablation ◽  
Laser Fluence ◽  
Langmuir Probe ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Experimental Results ◽  
Initial Formation ◽  
Si Nanocrystal ◽  
Ar Gas

Si nanocrystal grains were prepared by pulsed laser ablation with different laser fluence in Ar gas of 10 Pa at room temperature. The as-formed grains in the space deposited on the substrates and distributed in a certain range apart from target. According to the depositing position and radius of grains, the nucleation locations of grains in the space were roughly calculated. The results indicated that the width of nucleation region broadened with increasing of ion densities diagnosed by Langmuir probe, which increased with laser fluence from 2 J/cm2 to 6 J/cm2; that is, width of nucleation region broadened with addition of laser fluence. At the same time, the width broadened with the terminal formation position moving backward and the initial formation position of grains moving toward ablated spot. The experimental results were explained reasonably by nucleation thermokinetic theory.

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