Optical transmittance and electrical transport investigations of Fe-doped In2O3 thin films

2021 ◽  
Vol 127 (5) ◽  
Author(s):  
Afroz Khan ◽  
F. Rahman ◽  
Razia Nongjai ◽  
K. Asokan
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Optical Transmittance

scholarly journals Electrical transport properties and Kondo effect in La1−xPrxNiO3−δ thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Van Hien-Hoang ◽  
Nak-Kwan Chung ◽  
Heon-Jung Kim
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Kondo Effect ◽  
Magnetic Moments ◽  
Structural Disorder ◽  
Strongly Correlated ◽  
Electrical Transport Properties ◽  
Strongly Correlated Electron ◽  
Correlated Electron Systems ◽  
Correlated Electron

AbstractThe Kondo effect has been a topic of intense study because of its significant contribution to the development of theories and understanding of strongly correlated electron systems. In this work, we show that the Kondo effect is at work in La1−xPrxNiO3−δ (0 ≤ x ≤ 0.6) thin films. At low temperatures, the local magnetic moments of the 3d eg electrons in Ni2+, which form because of oxygen vacancies, interact strongly with itinerant electrons, giving rise to an upturn in resistivity with x ≥ 0.2. Observation of negative magnetoresistance, described by the Khosla and Fisher model, further supports the Kondo picture. This case represents a rare example of the Kondo effect, where Ni2+ acts as an impurity in the background of Ni3+. We suggest that when Ni2+ does not participate in the regular lattice, it provides the local magnetic moments needed to scatter the conduction electrons in the Kondo effect. These results offer insights into emergent transport behaviors in metallic nickelates with mixed Ni3+ and Ni2+ ions, as well as structural disorder.

Electrical transport of sprayed In2S3:Ag thin films

2020 ◽  
Vol 114 ◽  
pp. 105080 ◽  
Author(s):  
B. Tiss ◽  
N. Bouguila ◽  
M. Kraini ◽  
K. Khirouni ◽  
C. Vázquez–Vázquez ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Transport

Photocatalytic Degradation of Methylene Blue by NiO Thin Films under Solar Light Irradiation

2019 ◽  
Vol 56 ◽  
pp. 152-157 ◽  
Author(s):  
Abdelouahab Noua ◽  
Hichem Farh ◽  
Rebai Guemini ◽  
Oussama Zaoui ◽  
Tarek Diab Ounis ◽  
...  
Keyword(s):  
Thin Films ◽  
Methylene Blue ◽  
Photocatalytic Activity ◽  
Sol Gel ◽  
Visible Region ◽  
Optical Transmittance ◽  
Dip Coating ◽  
Light Irradiation ◽  
Solar Light ◽  
Solar Light Irradiation

Nickel oxide (NiO) thin films were successfully deposited by sol-gel dip-coating method on glass substrates. The structural, morphological and optical properties in addition to the photocatalytic activity of the prepared films were investigated. The results show that the films have a polycrystalline NiO cubic structure with dense NiO grains and average optical transmittance in the visible region. The photocatalytic properties of the films were studied through the degradation of methylene blue and 89% of degradation was achieved for 4.5h of solar light irradiation exposure which indicates the capability of NiO photocatalytic activity.

Electrical transport and morphological study of PLD-grown nanostructured amorphous carbon thin films

2006 ◽  
Vol 17 (20) ◽  
pp. 5244-5247 ◽  
Author(s):  
K Mohan Kant ◽  
N Mahipal Reddy ◽  
N Rama ◽  
K Sethupathi ◽  
M S Ramachandra Rao
Keyword(s):  
Thin Films ◽  
Amorphous Carbon ◽  
Electrical Transport ◽  
Morphological Study ◽  
Carbon Thin Films

scholarly journals Electrical Transport and Grain Growth in Solution-Cast, Chloride-Terminated Cadmium Selenide Nanocrystal Thin Films

ACS Nano ◽  
2014 ◽  
Vol 8 (7) ◽  
pp. 7513-7521 ◽  
Author(s):  
Zachariah M. Norman ◽  
Nicholas C. Anderson ◽  
Jonathan S. Owen
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Grain Growth ◽  
Electrical Transport ◽  
Solution Cast

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Al-DOPED ZnO TRANSPARENT CONDUCTING OXIDE FOR SOLAR CELL APPLICATIONS

2011 ◽  
Vol 04 (04) ◽  
pp. 401-405 ◽  
Author(s):  
W. CHER ◽  
S. YICK ◽  
S. XU ◽  
Z. J. HAN ◽  
K. OSTRIKOV
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Transparent Conducting Oxide ◽  
Optical Transmittance ◽  
Nitrogen Atmosphere ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Optimal Annealing Temperature ◽  
Post Synthesis

Al -doped zinc oxide (AZO) thin films are deposited onto glass substrates using radio-frequency reactive magnetron sputtering and the improvements in their physical properties by post-synthesis thermal treatment are reported. X-ray diffraction spectra show that the structure of films can be controlled by adjusting the annealing temperatures, with the best crystallinity obtained at 400°C under a nitrogen atmosphere. These films exhibit improved quality and better optical transmittance as indicated by the UV-Vis spectra. Furthermore, the sheet resistivity is found to decrease from 1.87 × 10-3 to 5.63 × 10-4Ω⋅cm and the carrier mobility increases from 6.47 to 13.43 cm2 ⋅ V-1 ⋅ s-1 at the optimal annealing temperature. Our results demonstrate a simple yet effective way in controlling the structural, optical and electrical properties of AZO thin films, which is important for solar cell applications.

Electrical Transport Mechanisms and Photoconduction in Undoped Crystalline Flash-Evaporated Lead Iodide Thin Films

2017 ◽  
Vol 47 (3) ◽  
pp. 1806-1818 ◽  
Author(s):  
Tariq M. Al-Daraghmeh ◽  
Mahmoud H. Saleh ◽  
Mais Jamil A. Ahmad ◽  
Basim N. Bulos ◽  
Khawla M. Shehadeh ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Transport Mechanisms ◽  
Lead Iodide

Buffer Layer Thickness and the Properties of InN Thin Films on AIN- Seeded (00.1) Sapphire And (111) Silicon

1994 ◽  
Vol 339 ◽  
Author(s):  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
W. A. Bryden
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Electrical Transport ◽  
Lattice Mismatch ◽  
Electrical Mobility ◽  
Seeded Growth ◽  
Electrical Transport Properties ◽  
Buffer Layer Thickness ◽  
Homogeneous Strain

ABSTRACTIntroduction of a buffer layer to facilitate heteroepitaxy in thin films of the Group IIIA nitrides has had a tremendous impact on growth morphology and electrical transport. While AIN- and self-seeded growth of GaN has captured the majority of attention, the use of AIN-buffered substrates for InN thin films has also had considerable success. Herein, the properties of InN thin films grown by reactive magnetron sputtering on AIN-buffered (00.1) sapphire and (111) silicon are presented and, in particular, the evolution of the structural and electrical transport properties as a function of buffer layer sputter time (corresponding to thicknesses from ∼50Å to ∼0.64 μm) described. Pertinent results include: (a) for the InN overlayer, structural coherence and homogeneous strain normal to the (00.1) growth plane are highly dependent on the thickness of the AIN-buffer layer; (b) the homogeneous strain in the AIN-buffer layer is virtually nonexistent from a thickness of 200Å (where a significant X-ray intensity for (00.2)AIN is observed); and (c) the n-type electrical mobility for films on AIN-nucleated (00.1) sapphire is independent of AIN-buffer layer thickness, owing to divergent variations in carrier concentration and film resistivity. These effects are in the main interpreted as arising from a competition between the lattice mismatch of the InN overlayer with the substrate and with the AIN-buffer layer.

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