Annealing effects on the microstructural and optical properties of Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

2005 ◽  
Vol 40 (19) ◽  
pp. 5303-5305
Author(s):  
Y. S. Ryu ◽  
T. W. Kang ◽  
T. W. Kim
2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.


2016 ◽  
Vol 176 ◽  
pp. 40-46 ◽  
Author(s):  
A. Coyopol ◽  
M.A. Cardona ◽  
T. Díaz Becerril ◽  
L. Licea Jimenez ◽  
A. Morales Sánchez

2011 ◽  
Vol 257 (13) ◽  
pp. 5519-5523 ◽  
Author(s):  
Lida Wang ◽  
Guichang Liu ◽  
Longjiang Zou ◽  
Dongfeng Xue

2021 ◽  
Vol 16 (2) ◽  
pp. 243-248
Author(s):  
Fatmah S. Bahabri ◽  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti

In this work, we study the optical properties of the Nickel doped cupric oxide Ni-CuO thin films with Ni various doping concentrations (0, 20, 30, 50, 70, and 80%), at two different annealing temperatures; 200 and 400 °C. The absorbance and optical bandgap for the films are calculated and compared. We find that all films exhibit clear peaks in the visible range, with the increase in the absorptivity via increasing both annealing and Ni concentration. We also find that the annealing affects the shape of the absorbance peaks to be narrowed and blue shifted. Investigation on the direct bandgap energy shows that all films exhibit large direct gap; ranging from 3.87 to 4.01 eV. For non-annealed films, direct bandgap increases with increasing the Ni concentration, while for the annealed samples, the direct bandgap generally decreases by annealing, and with increasing the doping concentration. For the indirect bandgap analysis, the calculated values of the bandgap are ranging from 0.62 to 1.96 eV. We find that for non-annealed films, the indirect bandgap increases with increasing the doping concentration, while after annealing, the bandgap decreases with increasing the doping concentration for the annealing at 200 and 400 °C, with more decreasing in the gap at 400 °C.


2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1320-1323 ◽  
Author(s):  
Min Young Cho ◽  
Hyun Young Choi ◽  
Min Su Kim ◽  
Jae-Young Leem ◽  
Dong-Yul Lee ◽  
...  

2009 ◽  
Vol 484 (1-2) ◽  
pp. 645-648 ◽  
Author(s):  
R.K. Pan ◽  
H.Z. Tao ◽  
H.C. Zang ◽  
X.J. Zhao ◽  
T.J. Zhang

Vacuum ◽  
2010 ◽  
Vol 84 (11) ◽  
pp. 1280-1286 ◽  
Author(s):  
B.L. Zhu ◽  
X.Z. Zhao ◽  
F.H. Su ◽  
G.H. Li ◽  
X.G. Wu ◽  
...  

2015 ◽  
Vol 119 (3) ◽  
pp. 1149-1154 ◽  
Author(s):  
Liqiang Li ◽  
Yaqiang Liu ◽  
Wenxing Zhang ◽  
Wencong Chen ◽  
Peng Li ◽  
...  

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