Influences of selenization temperature on the properties of CZTSSe thin films and CZTSSe/Mo interfaces

2021 ◽  
Author(s):  
Xiaoshuai Wu ◽  
Jiaxiong Xu ◽  
Chunan Zhuang
Keyword(s):  
Thin Films ◽  
Selenization Temperature

Effect of selenization temperature on the physical properties of Cu2SnSe3 thin films

2020 ◽  
Vol 709 ◽  
pp. 138238
Author(s):  
Mohan Reddy Pallavolu ◽  
Ramesh Reddy Nallapureddy ◽  
Hasi Rani Barai ◽  
Sang Woo Joo
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Selenization Temperature

The Effects of Selenization Temperature on the Properties of CIGS Thin Film Prepared by Cu-In-Ga-Se Precursors

2012 ◽  
Vol 528 ◽  
pp. 214-218
Author(s):  
Han Bin Wang ◽  
Xi Jian Zhang ◽  
Qing Pu Wang ◽  
Xue Yan Zhang ◽  
Xiao Yu Liu
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Degree Of Reaction ◽  
N2 Atmosphere ◽  
Cigs Thin Film ◽  
Morphology Of Films ◽  
Selenization Temperature

CIGS thin films were prepared by selenization of Cu-In-Ga-Se precursors, as a new method, the effects of selenization temperature on the properties of CIGS thin films were studied. First, Cu-In-Ga-Se precursors were deposited onto Mo-coated soda lime glass by evaporation and sputtering method. Then, precursors were selenized at various temperatures in N2 atmosphere for 120 min to form CIGS thin films. The degree of reaction and morphology of films as a function of selenization temperature were analyzed. By means of field emission scanning electron microscope (SEM) and X-ray diffraction (XRD), it was found that CIGS thin films selenized at 450°C exhibit chalcopyrite phase with preferred orientation along the (112) plane.

Fabrication of High-Quality CuInSe2 Films by Coating, Compaction and Selenization

2012 ◽  
Vol 625 ◽  
pp. 287-290
Author(s):  
Jin Gang Xu ◽  
Yan Lai Wang ◽  
Hong Bo Nie
Keyword(s):  
Thin Films ◽  
Smooth Surface ◽  
Single Phase ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
New Phase ◽  
Cuinse2 Film ◽  
Selenization Process ◽  
Selenization Temperature

CuInSe2 thin films were successfully prepared by selenization of precursor films coated on the Mo foils. The precursor films were compacted to improve surface morphology and density of CuInSe2 thin films. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). The results indicate that the single-phase CuInSe2 is formed at 210 °C in selenization process and it exhibits preferred orientation along the (112) plane. The selenization temperature is above 210 °C, the selenization temperature rises to promote the crystallinity of selenized films, not to induce the occurrence of a new phase. The compact CuInSe2 film with smooth surface can be obtained by selenization of precursor films pressed with the pressure of 300 MPa.

Influence of Selenization Temperature on Co-sputtered CZTSSe Thin Films and Related Solar Cells

2019 ◽  
Vol 40 (1) ◽  
pp. 82-88
Author(s):  
孙孪鸿 SUN Luan-hong ◽  
沈鸿烈 SHEN Hong-lie ◽  
黄护林 HUANG Hu-lin ◽  
李玉芳 LI Yu-fang ◽  
商慧荣 SHANG Hui-rong
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Selenization Temperature

Effect of selenization temperature on the properties of Sb2Se3 thin films and solar cells by two-step method

2019 ◽  
Vol 30 (22) ◽  
pp. 19871-19879
Author(s):  
Shubing Li ◽  
Honglie Shen ◽  
Jieyi Chen ◽  
Yaohua Jiang ◽  
Luanhong Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Step Method ◽  
Selenization Temperature

Influence of selenization temperature on the properties of CuInSe2 thin films prepared by spin coating technique

2006 ◽  
Vol 3 (8) ◽  
pp. 2535-2538 ◽  
Author(s):  
S. Merdes ◽  
L. Bechiri ◽  
Z. Hadjoub ◽  
M. Sano ◽  
S. Ando
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Selenization Temperature

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

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