scholarly journals Experiments on a High Quality Grid Oscillating in Superfluid 4He at Very Low Temperatures

2009 ◽  
Vol 158 (3-4) ◽  
pp. 462-467 ◽  
Author(s):  
V. B. Efimov ◽  
Deepak Garg ◽  
M. Giltrow ◽  
P. V. E. McClintock ◽  
L. Skrbek ◽  
...  
1989 ◽  
Author(s):  
Hiroshi Fukuyama ◽  
Ikuya Kurikawa ◽  
Hidehiko Ishimoto ◽  
Shinji Ogawa

2005 ◽  
Vol 890 ◽  
Author(s):  
Hiroshi Masumoto ◽  
Takashi Goto

ABSTRACTIt is known that zirconia has excellent thermal and chemical stability, and oxide ion conduction. Therefore, YSZ is expected to be used as oxide ion conducting materials, optical mirror materials, catalytic materials and heat-resistant materials. Zirconia films have been fabricated by PVD (ex. sputtering and laser-ablation), chemical vapor deposition (CVD) and sol-gel methods. CVD is capable to prepare high quality zirconia films with excellent conformal coverage; however, deposition temperature of conventional CVD was usually high than PVD. On the other hand, an electron cyclotron resonance (ECR) plasma is high-activity plasma and high quality crystalline films can be obtained at low temperature by using ECR plasma. In the present study, zirconia thin films were prepared at low temperatures on quartz, polycarbonate and polyimide substrates by ECR plasma MOCVD.Zr-hexafluoroacetylacetonato solution was used as a precursor. The source, which was placed in a glass bubbler, was carried into a reactor by Ar gas. A microwave (2.45 GHz, 500 W) was introduced into the ion chamber through a rectangular wave guide. A magnetic field (875 Gauss) was applied to the ion chamber to satisfy the ECR condition. A mirror-type magnetic field (450 Gauss at the substrate stage) was applied in order to raise a plasma density, which results in an increase of the deposition rates of films. Substrate temperature (Ts) was from 30 to 700 C by water-cooling holder and infrared lamp heater. Microwave power was changed from 0 to 900 W. The deposition time was from 30 to 120 minutes.Cubic, monoclinic and tetragonal zirconia films were obtained over Ts=400 C, and cubic and monoclinic zirconia films were obtained below Ts= C. Cubic and monoclinic zirconia films were also obtained at no heating. The deposition rate increased from 10 to 20 nm/min with increasing Ts from no heating to 600 C. Crystallized zirconia films were obtained on polycarbonate and polyimide substrates at no heating. The ECR plasma was significantly effective to prepare crystallized zirconia films at low temperatures.


2005 ◽  
Vol 138 (3-4) ◽  
pp. 493-498 ◽  
Author(s):  
D. I. Bradley ◽  
D. O. Clubb ◽  
S. N. Fisher ◽  
A. M. Gu�nault ◽  
R.P. Haley ◽  
...  

1983 ◽  
Vol 24 ◽  
Author(s):  
J. Toulouse ◽  
A.S. Nowick

ABSTRACTAlkali ions, which compensate for substitional Al3+, play an important role in the frequency stability of α-quartz crystals. In this work, low temperature dielectricloss measurements (between 2.9 and 300 K) are carried out on crystals that have been “swept” so as to introduce either Li+ or Na+. High quality synthetic crystals as well as natural crystals are employed. The well known loss peaks due to Al-Na pairs are further explored and similar peaks due to Al-Li are sought after but not found. It is concluded that the Al-Li pair is oriented along the C2 -axis of the A104 distorted tetrahedron. After irradiation, large peaks are observed at very low temperatures both in Li+- and Na+-containing crystals. These peaks, which are distorted below ∼6 K due to the onset of quantum effects, may originate in alkali centers produced when alkali ions are liberated by the irradiation.


ACS Nano ◽  
2012 ◽  
Vol 6 (11) ◽  
pp. 9996-10003 ◽  
Author(s):  
Robert S. Weatherup ◽  
Bruno Dlubak ◽  
Stephan Hofmann

1999 ◽  
Vol 595 ◽  
Author(s):  
W.L. Sarney ◽  
L. Salamanca-Riba ◽  
V. Ramachandran ◽  
R.M Feenstra ◽  
D.W. Greve

AbstractGaN films grown on SiC (0001) by MBE at various substrate temperatures (600° - 750° C) were characterized by RHEED, STM, x-ray diffraction, AFM and TEM. This work focuses on the TEM analysis of the films' features, such as stacking faults and dislocations, which are related to the substrate temperature. There are several basal plane stacking faults in the form of cubic inclusions for samples grown at low temperatures compared to those grown at high temperatures. The dislocation density is greatest for the film grown at 600°C, and it steadily decreases with increasing growth temperatures. Despite the presence of various defects, x-ray analysis shows that the GaN films are of high quality. The double crystal rocking curve full width at half maximum (FWHM) for the GaN (0002) peak is less than 2 arc-minutes for all of the films we measured and it decreases with increasing growth temperature.


2008 ◽  
Vol 517 (1) ◽  
pp. 242-244 ◽  
Author(s):  
K. Yasutake ◽  
H. Ohmi ◽  
Y. Kirihata ◽  
H. Kakiuchi

1987 ◽  
Vol 61 (8) ◽  
pp. 3211-3213 ◽  
Author(s):  
M. Abe ◽  
Y. Tamaura ◽  
Y. Goto ◽  
N. Kitamura ◽  
M. Gomi

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