Composite Semiconductor Material of Carbon Nanotubes and Poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] for High-Performance Organic Thin-Film Transistors

2013 ◽  
Vol 42 (12) ◽  
pp. 3481-3488 ◽  
Author(s):  
Cameron Derry ◽  
Yiliang Wu ◽  
Shiping Zhu ◽  
Jamal Deen
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Semiconductor Material ◽  
Organic Thin Film

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

High-Performance Solution-Processed n-Channel Organic Thin-Film Transistors Based on a Long Chain Alkyl-Substituted C60Derivative

2010 ◽  
Vol 3 (10) ◽  
pp. 101601 ◽  
Author(s):  
Yoshinori Horii ◽  
Koichi Sakaguchi ◽  
Masayuki Chikamatsu ◽  
Reiko Azumi ◽  
Kiyoshi Yase ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Solution Processed ◽  
Long Chain

Cyano-Substituted Head-to-Head Polythiophenes: Enabling High-Performance n-Type Organic Thin-Film Transistors

2019 ◽  
Vol 11 (10) ◽  
pp. 10089-10098 ◽  
Author(s):  
Hang Wang ◽  
Jun Huang ◽  
Mohammad Afsar Uddin ◽  
Bin Liu ◽  
Peng Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Vapor-Phase Deposited Ultrathin Polymer Gate Dielectrics for High-Performance Organic Thin Film Transistors

2015 ◽  
Vol 2 (2) ◽  
pp. 1500209 ◽  
Author(s):  
Hyejeong Seong ◽  
Kwanyong Pak ◽  
Munkyu Joo ◽  
Junhwan Choi ◽  
Sung Gap Im
Keyword(s):  
Thin Film ◽  
Vapor Phase ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectrics ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

High-Performance Semiconducting Polythiophenes for Organic Thin-Film Transistors

2004 ◽  
Vol 126 (11) ◽  
pp. 3378-3379 ◽  
Author(s):  
Beng S. Ong ◽  
Yiliang Wu ◽  
Ping Liu ◽  
Sandra Gardner
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Diketopyrrolopyrrole-based polymer with a semi-fluorinated side chain for high-performance organic thin-film transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (35) ◽  
pp. 29164-29171 ◽  
Author(s):  
Kangjian Miao ◽  
Gil Jo Chae ◽  
Xiaoxue Wu ◽  
Qinghai Shu ◽  
Xin Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Hole Mobility ◽  
Organic Thin Film Transistors ◽  
Side Chain ◽  
Organic Thin Film

A semi-fluorinated DPP based polymer showed hole mobility about 3 times higher than did its non-fluorinated analogue.

Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H-21DNTT

2021 ◽  
Author(s):  
Anubha Bilgaiyan ◽  
Seung-Il Cho ◽  
Miho Abiko ◽  
Kaori Watanabe ◽  
Makoto Mizukami
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Channel Length ◽  
Logic Circuits ◽  
Organic Thin Film Transistors ◽  
Limiting Factors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Inverter Circuit

Abstract The low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric and 6,6 bis (trans-4-butylcyclohexyl)-dinaphtho[2,1-b:2,1-f ]thieno[3,2-b]thiophene (4H-21DNTT) for the organic semiconducting layer. By optimizing and controlling the fabrication conditions, a record high saturation mobility of 8.8 cm2V− 1s− 1 was demonstrated as well as large on/off ratios (> 106) for relatively short channel lengths of 15 µm and an average carrier mobility of 10.5 cm2V-1s-1 for long channel length OTFTs (> 50 µm). The pseudo-CMOS inverter circuit with a channel length of 15 µm exhibited sharp switching characteristics with a high signal gain of 31.5 at a supply voltage of 20 V. In addition to the inverter circuit, NAND logic circuits were further investigated, which also exhibited remarkable logic characteristics, with a high gain, an operating frequency of 5 kHz, and a short propagation delay of 22.1 µs. The uniform and reproducible performance of 4H-21DNTT OTFTs show potential for large-area, low-cost real-world applications on industry-compatible bottom-contact substrates.

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