Electron cyclotron resonance plasma etching of materials for magneto-resistive random access memory applications

1997 ◽  
Vol 26 (11) ◽  
pp. 1310-1313 ◽  
Author(s):  
K. B. Jung ◽  
J. W. Lee ◽  
Y. D. Park ◽  
J. R. Childress ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Electron Cyclotron ◽  
Access Memory ◽  
Memory Applications ◽  
Resonance Plasma

Deprocessing Methodologies for Detection of IBC and Cell-to-Cell Shorts in Submicron DRAM

2012 ◽  
Author(s):  
Ramachandra Chitakudige ◽  
Sarat Kumar Dash ◽  
A.M. Khan
Keyword(s):  
High Selectivity ◽  
Electron Cyclotron Resonance ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Plasma System ◽  
Poly Silicon ◽  
Hazardous Gases ◽  
Wet Etch ◽  
Resonance Plasma

Abstract Detection of both Insufficient Buried Contact (IBC) and cell-to-cell short defects is quite a challenging task for failure analysis in submicron Dynamic Random Access Memory (DRAM) devices. A combination of a well-controlled wet etch and high selectivity poly silicon etch is a key requirement in the deprocessing of DRAM for detection of these types of failures. High selectivity poly silicon etch methods have been reported using complicated system such as ECR (Electron Cyclotron Resonance) Plasma system. The fact that these systems use hazardous gases like Cl2, HBr, and SF6 motivates the search for safer alternative deprocessing chemistries. The present work describes high selectivity poly silicon etch using simple Reactive Ion Etch (RIE) plasma system using less hazardous gases such as CF4, O2 etc. A combination of controlled wet etch and high selectivity poly silicon etch have been used to detect both IBC and cell-to-cell shorts in submicron DRAMs.

Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar

1990 ◽  
Vol 56 (15) ◽  
pp. 1424-1426 ◽  
Author(s):  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
A. P. Kinsella ◽  
D. Johnson ◽  
C. Constantine
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma

Evaluation of Semiconductor Lattice Damage Using a Newly-Developed Photodisplacement Laser Probe

1991 ◽  
Vol 236 ◽  
Author(s):  
S. Sumie ◽  
H. Takamatsu ◽  
H. Tsunaki ◽  
Y. Nishimoto ◽  
Y Nakai
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Laser Probe ◽  
Low Level ◽  
Highly Sensitive ◽  
Lattice Damage ◽  
Density Surface ◽  
Resonance Plasma

AbstractA highly sensitive laser probe for photo-acoustic displacement(PAD) has been developed and applied to the monitoring of low-level lattice damage in semiconductors. Since a photodisplacement laser probe with the sensitivity of 0.1 picometers is employed in this measurement, lower density damage for instance, formed by 50 keV B+ implantation with a dose of 5X109 ions/cm2 can be detected. Correlation of the PAD with damage density was obtained in B+ implantation. Therefore, quantitative damage density can be obtained from the relation for lightly damaged layers, such as formed by chemomechanical polishing and by electron cyclotron resonance plasma etching. This technique is useful-for monitoring of low damage density surface.

ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides

1996 ◽  
Vol 69 (10) ◽  
pp. 1426-1428 ◽  
Author(s):  
C. B. Vartuli ◽  
S. J. Pearton ◽  
J. W. Lee ◽  
J. Hong ◽  
J. D. MacKenzie ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma
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