Deduction of Organic and Inorganic Pollutant from Sugarcane Processing Plant Effluent by Thermal-oxidation and Electro-oxidation Processes in Batch Experiment

2020 ◽  
Vol 3 (4) ◽  
pp. 965-978
Author(s):  
Omprakash Sahu
2020 ◽  
Vol 33 ◽  
pp. 101039 ◽  
Author(s):  
Laura Franzen Ramos ◽  
Salatiel Wohlmuth da Silva ◽  
Daniela Eduarda Schneider ◽  
Marco Antônio Siqueira Rodrigues ◽  
Andréa Moura Bernardes

2013 ◽  
Vol 51 (10-12) ◽  
pp. 2170-2184 ◽  
Author(s):  
Mohammed J.K. Bashir ◽  
Hamidi Abdul Aziz ◽  
Shuokr Qarani Aziz ◽  
Salem S. Abu Amr

Author(s):  
Mohamad Reza KHODADADI ◽  
Sarfaraz HASHEMKHANI ZOLFANI ◽  
Morteza YAZDANI ◽  
Edmundas Kazimieras ZAVADSKAS

Organic components, widely spread in water by industrial sources become emerging Contaminants in the water. Due deficient removal in conventional wastewater treatments, advanced treatment should be considered for industrial wastewaters removing. Advance oxidation processes (aops) can be used as an effective subset of chemical treatment for degradation of toxic from water in industrial processing plant. Two Multiple Criteria Decision Making (MCDM) methods based on hybrid SWARA-WASPAS are organized to investigate efficiency of different sort of aops: ozonation, fenton, electrochemical Oxidation, UV/Photo-catalysis, UV/H2O2. Based on MCDM, Fenton is the most possible aops for application in wastewater treatment areas. In this study, SWARA is deployed in evaluating criteria that were identified in literature review, and WASPAS is used for evaluating and ranking the methods. The main point of this study is based on real data.


1990 ◽  
Vol 204 ◽  
Author(s):  
J.B. Cross ◽  
M.A. Hoffbauer ◽  
J.D. Farr ◽  
O.J. Glembocki ◽  
V.M. Bermudez

ABSTRACTOxide layers that are thick (>200 Å and uniform have been produced on GaAs (110) and (100) by reacting the substrate (Ts<160°C) with high translational energy (1-3 eV) neutral atomic oxygen at flux levels of∼50 monolayers/second. The Ga and As species are formed in their highest oxidation states, which implies formation of either Ga2O3 and As2O5 or GaAsO4. Raman spectroscopy indicates that there is no metallic (amorphous or crystalline) As in the oxide or at the interface between the oxide and substrate and that there is no appreciable oxidation induced disorder of the substrate as is seen in high temperature thermal oxidation processes.


2004 ◽  
Vol 43 (9) ◽  
pp. 1923-1931 ◽  
Author(s):  
Pablo Cañizares ◽  
Jesús García-Gómez ◽  
Justo Lobato ◽  
Manuel A. Rodrigo

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