The Czochralski growth of optical quality bismuth silicon oxide (Bi12SiO20)

1977 ◽  
Vol 42 ◽  
pp. 431-434 ◽  
Author(s):  
A.R. Tanguay ◽  
S. Mroczkowski ◽  
R.C. Barker
Author(s):  
G. S. Liaw ◽  
Y. M. Zheng ◽  
J. D. Mo ◽  
L. C. Chou

Abstract A comprehensive numerical modeling of the Czochralski crystal growth system has been conducted for the growth of Bismuth Silicon Oxide (BSO). Both the thermal buoyancy and the surface tension effects are taken into account in the convective flow field. A pressure-based numerical algorithm in conjunction with an algebraic adaptive grid procedure is employed for the simultaneous solution of the melt flow field and the global melt/solid temperature distribution. The free surface effect is treated by coupling the Young-Laplace equation with the flow field along the interface. The results of the quasi-steady-state model at three different stages are presented, they agree with the experimental observations qualitatively.


1992 ◽  
Author(s):  
Charles L. Eads ◽  
Azad Siahmakoun ◽  
Arthur B. Western

1990 ◽  
Vol 15 (17) ◽  
pp. 935 ◽  
Author(s):  
D. C. Jones ◽  
S. F. Lyuksyutov ◽  
L. Solymar

2000 ◽  
Vol 39 (23) ◽  
pp. 4112
Author(s):  
Zhaoqi Wang ◽  
Jiuhong Guan ◽  
Baolai Liang ◽  
Guoguang Mu

1990 ◽  
Vol 42 (9) ◽  
pp. 5641-5648 ◽  
Author(s):  
M. C. Bashaw ◽  
T.-P. Ma ◽  
R. C. Barker ◽  
S. Mroczkowski ◽  
R. R. Dube

1984 ◽  
Vol 82 (1) ◽  
pp. K95-K99 ◽  
Author(s):  
V. I. Berezkin ◽  
A. I. Grachev

Sign in / Sign up

Export Citation Format

Share Document