Metalorganic molecular beam epitaxial growth of InP and InGaP with tertiarybutylphosphine for the application of carbon-doped base heterojunction bipolar transistors

1994 ◽  
Vol 145 (1-4) ◽  
pp. 935-940 ◽  
Author(s):  
Jun-ichi Shirakashi ◽  
Ricardo T. Yoshioka ◽  
Toshiaki Azuma ◽  
Fumihiko Fukuchi ◽  
Makoto Konagai ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Carbon Doped ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Effect of the addition of an elemental Ga flux on the metalorganic molecular beam epitaxial growth of heavily carbon-doped InGaAs

1994 ◽  
Vol 136 (1-4) ◽  
pp. 186-190
Author(s):  
Jun-ichi Shirakashi ◽  
Ricardo T. Yoshioka ◽  
Akifumi Miyano ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of low‐resistivity ZnSe films

1979 ◽  
Vol 35 (2) ◽  
pp. 97-98 ◽  
Author(s):  
Takafumi Yao ◽  
Yunosuke Makita ◽  
Shigeru Maekawa
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Low Resistivity ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
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