High-resolution transmission electron microscopy of the CoGa/GaAs heterostructure grown by molecular beam epitaxy

1994 ◽  
Vol 91 (3) ◽  
pp. 219-221
Author(s):  
Y.D. Woo ◽  
T.W. Kang ◽  
T.W. Kim ◽  
J.Y. Lee ◽  
T.C. Kuo ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Transmission Electron

Vertical self-organization of Ge1−xMnx nanocolumn multilayers grown on Ge(001) substrates

2016 ◽  
Vol 30 (20) ◽  
pp. 1650269 ◽  
Author(s):  
Thi Giang Le ◽  
Minh Tuan Dau
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Elastic Constant ◽  
Structural Properties ◽  
Molecular Beam ◽  
Self Organization ◽  
Transmission Electron ◽  
2D Model

High-resolution transmission electron microscopy (HR-TEM) has been used to investigate the structural properties of GeMn/Ge nanocolumns multilayer samples grown on Ge(001) substrates by means of molecular beam epitaxy (MBE) system. Four bilayers with the spacer thickness in the range between 6 nm and 15 nm and 10 periods of bilayers of Ge[Formula: see text]Mn[Formula: see text]/Ge nanocolumn are presented. A simplified 2D model based on the theory of elastic constant interactions has been used to provide reasonable explanations to the vertical self-organization of GeMn nanocolumns in multilayers.

Double Periodicity Formation in EuTe/PbTe Superlattices

1995 ◽  
Vol 399 ◽  
Author(s):  
M. Shima ◽  
L. Salamanca-Riba ◽  
G. Springholz ◽  
G. Bauer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices

ABSTRACTMolecular beam epitaxy was used to grow EuTe(x)/PbTe(y) short period superlattices with x=1-4 EuTe(111) monolayers alternating with y≈3x PbTe monolayers. The superlattices were characterized by transmission electron microscopy and high resolution x-ray diffraction. Regions with double periodicity were observed coexisting with areas of nominal periodicity. The sample with x=3.5 and y=9, for example, contains regions with double periodicity of x=7 and y=17. X-ray diffraction measurements confirm the formation of the double periodicity in these samples by the appearance of weak satellites in between the satellites of the nominal periodicity. The double periodicity in the superlattice is believed to result from interdiffusion during the growth. A model for this process is presented.

Gas-source molecular beam epitaxy of monocrystalline β–SiC on vicinal α(6H)–SiC

1993 ◽  
Vol 8 (11) ◽  
pp. 2753-2756 ◽  
Author(s):  
L.B. Rowland ◽  
R.S. Kern ◽  
S. Tanaka ◽  
Robert F. Davis
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Epitaxial Films ◽  
Gas Source ◽  
Transmission Electron ◽  
Surface Migration

Single-crystal epitaxial films of cubic β(3C)–SiC(111) have been deposited on hexagonal α(6H)–SiC(0001) substrates oriented 3–4° toward [1120] at 1050–1250 °C via gas-source molecular beam epitaxy using disilane (Si2H6) and ethylene (C2H4). High-resolution transmission electron microscopy revealed that the nucleation and growth of the β(3C)–SiC regions occurred primarily on terraces between closely spaced steps because of reduced rates of surface migration at the low growth temperatures. Double positioning boundaries were observed at the intersections of these regions.

High-Resolution Imaging of Coga/GaAs and Eras/GaAs Interfaces

1989 ◽  
Vol 159 ◽  
Author(s):  
Jane G. Zhu ◽  
Stuart McKeman ◽  
Chris J. Palmstrøm ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Scale ◽  
High Resolution Imaging ◽  
Transmission Electron ◽  
Resolution Imaging ◽  
Interface Structures

ABSTRACTCoGa/GaAs and ErAs/GaAs grown by molecular-beam epitaxy have been studied using high-resolution transmission electron microscopy (HRTEM). The epitactic interfaces have been shown to be abrupt on the atomic scale. Computer simulations of the HRTEM images have been obtained for different interface structures under various specimen and image conditions. Practical problems in the comparison between the simulated and experimental images are discussed.

Nucleation and Stochiometry Dependence of Rutile-TiO2(001)/GaN(0001) Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

2008 ◽  
Vol 1108 ◽  
Author(s):  
Costel Constantin ◽  
kai sun ◽  
Randall M Feenstra
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Initial Nucleation

AbstractIn this work we explore both the initial nucleation and the stoichiometry of rutile-TiO2(001) grown on wurtzite GaN(0001) by radio-frequency O2-plasma molecular beam epitaxy. Two studies are performed; in the first, the dependence of the growth on stoichiometry (Ti-rich and O-rich) is observed using reflection high energy electron diffraction and high resolution transmission electron microscopy. In the second study we examine the effect of different initial nucleation surfaces (i.e. Ga-terminated and excess Ga-terminated) and compare the interfaces and bulk crystallinity of the TiO2(001) films grown on top of these surfaces. High-resolution transmission electron microscopy and x-ray diffraction measurements show a better interface for TiO2(001)/Ga-terminated - GaN(0001) as compared to the TiO2(001)/excess Ga-terminated- GaN(0001).

Asymmetric Cracking in Znse/ZnSxSel−x Superlattices Grown by Molecular Bean Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
Richard J. Dalby ◽  
John Petruzzello
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermal Expansion ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Sulfur Concentration ◽  
Transmission Electron ◽  
Theoretical Predictions ◽  
Superlattice Layer

ABSTRACTOptical and transmission electron microscopy have been used to study cracks appearing in ZnSe/ZnSxSe1−x (x ∼ 0.38) superlattices grown by Molecular Beam Epitaxy. It Is shown that when a fracture occurs it is confined, in most cases, to the superlattice and propagates along <011> cleavage directions in these <001> oriented epilayers. Cracks were not observed in all superlattices and their onset is discussed in relation to sulfur concentration, overall superlattice height, individual superlattice layer thicknesses, and stress, tensile or compressive, due to lattice mismatch and thermal expansion differences between buffer layer and superlattice. It was found that by adjusting the controllable parameters, cracks in the superlattices could be eliminated. Orientation and density of these features have been related to asynnmetric cracking associated with the zincblende structure of these II-VI materials. Experimental results are shown to be in agreement with theoretical predictions of critical heights for the onset of cracking.

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