A novel, very high breakdown voltage, field effect transistor prepared by molecular beam epitaxy

1991 ◽  
Vol 195 (1-2) ◽  
pp. 1-6 ◽  
Author(s):  
W.C. Liu ◽  
W.S. Lour ◽  
C.Y. Sun ◽  
H.R. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Breakdown Voltage ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
High Breakdown Voltage ◽  
Effect Transistor ◽  
Very High

On the --- high breakdown voltage field-effect transistor

1999 ◽  
Vol 14 (4) ◽  
pp. 307-311 ◽  
Author(s):  
Wen-Lung Chang ◽  
Shiou-Ying Cheng ◽  
Yung-Hsin Shie ◽  
Hsi-Jen Pan ◽  
Wen-Shiung Lour ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Breakdown Voltage ◽  
Effect Transistor

Low‐noise GaAs field‐effect transistor made by molecular beam epitaxy

1982 ◽  
Vol 41 (7) ◽  
pp. 633-635 ◽  
Author(s):  
M. Feng ◽  
V. K. Eu ◽  
I. J. D’Haenens ◽  
M. Braunstein
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
Low Noise ◽  
Effect Transistor

Atomic layer doped field‐effect transistor fabricated using Si molecular beam epitaxy

1989 ◽  
Vol 54 (19) ◽  
pp. 1869-1871 ◽  
Author(s):  
Kiyokazu Nakagawa ◽  
Aart A. van Gorkum ◽  
Yasuhiro Shiraki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
Atomic Layer ◽  
Effect Transistor
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