Improvement of the crystalline quality of an yttria-stabilized zirconia film on silicon by a new deposition process in reactive sputtering

1993 ◽  
Vol 229 (1) ◽  
pp. 17-23 ◽  
Author(s):  
Susumu Horita ◽  
Toshiyuki Tajima ◽  
Masakazu Murakawa ◽  
Takaharu Fujiyama ◽  
Tomonobu Hata
Keyword(s):  
Reactive Sputtering ◽  
Deposition Process ◽  
Yttria Stabilized Zirconia ◽  
Crystalline Quality ◽  
Stabilized Zirconia ◽  
Zirconia Film

Heteroepitaxial Growth of Yttria-Stabilized Zirconia Film on Silicon by Reactive Sputtering

1995 ◽  
Vol 34 (Part 1, No. 4A) ◽  
pp. 1942-1946 ◽  
Author(s):  
Susumu Horita ◽  
Masakazu Murakawa ◽  
\ast ◽  
Takaharu Fujiyama ◽  
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Keyword(s):  
Reactive Sputtering ◽  
Yttria Stabilized Zirconia ◽  
Heteroepitaxial Growth ◽  
Stabilized Zirconia ◽  
Zirconia Film

Development of Zirconia Electrolyte Films on Porous Doped Lanthanum Manganite Cathodes by Electrophoretic Deposition

1999 ◽  
Vol 575 ◽  
Author(s):  
R. N. Basu ◽  
C. A. Randall ◽  
M. J. Mayo
Keyword(s):  
Solid Oxide Fuel Cells ◽  
Electrophoretic Deposition ◽  
Yttria Stabilized Zirconia ◽  
Lanthanum Manganite ◽  
Ceramic Powders ◽  
Stabilized Zirconia ◽  
Uniform Coating ◽  
Cathode Tube ◽  
Zirconia Film ◽  
Zirconia Electrolyte

ABSTRACTElectrophoretic deposition (EPD) was explored as an inexpensive route for fabricating the 8mol% yttria stabilized zirconia electrolyte in solid oxide fuel cells (SOFCs). Normally, deposition of particulate ceramic powders onto a sintered porous surface yields a non uniform coating which, after sintering, results in porosity, surface roughness and cracking in the coating. To overcome this problem, the present study used a fugitive graphite interlayer between the porous air electrode supported (AES) cathode tube (doped-LaMnO3) and the deposited zirconia film. By this approach, a fairly dense green coating (˜ 60%) was obtained, which yielded a smooth surface and pore-free microstructure after sintering. Preliminary results on the effect of a fugitive interlayer on the unfired (green) and fired zirconia coatings are discussed.

scholarly journals Depth profiling of yttria-stabilized zirconia film by SIMS.

1994 ◽  
Vol 43 (3) ◽  
pp. 209-214
Author(s):  
Chiori YAKAWA ◽  
Hiroshi SANO ◽  
Hirokazu SASAKI ◽  
Toshiro NAKAYAMA
Keyword(s):  
Depth Profiling ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Zirconia Film

Y1Ba2Cu3O7–x multilayer structures with a thick SiO2 interlayer for multichip modules

1997 ◽  
Vol 12 (11) ◽  
pp. 2947-2951 ◽  
Author(s):  
S. Afonso ◽  
K. Y. Chen ◽  
Q. Xiong ◽  
Y. Q. Tang ◽  
G. J. Salamo ◽  
...  
Keyword(s):  
Stress Relief ◽  
Annealing Process ◽  
Yttria Stabilized Zirconia ◽  
Multilayer Structures ◽  
Low Dielectric Constant ◽  
Multichip Modules ◽  
Stabilized Zirconia ◽  
Ybco Layer ◽  
Low Dielectric

For high temperature superconducting multichip modules and other related electronic applications, it is necessary to be able to fabricate several Y1Ba2Cu3O7–x (YBCO) layers separated by thick low dielectric constant dielectric layers. In this work, we report the successful fabrication of YBCO/YSZ/SiO2 (1–2 μm)/YSZ/YBCO multilayer structures on single crystal yttria stabilized zirconia (YSZ) substrates. In contrast to previously reported work, the top YBCO layer did not show any cracking. This is due to a technique that allows for stress relief in the SiO2 layer before the second YBCO layer is deposited. The top YBCO layer in our multilayer structure had Tc = 87 K and Jc = 105 A/cm2 (at 77 K), whereas the bottom YBCO layer had Tc = 90 K and Jc = 1.2 × 106 A/cm2 (at 77 K). We also showed that the quality of the bottom YBCO layer was preserved during the fabrication of the multilayer due to the annealing process during which O2 diffused into the YBCO, replacing the O2 lost during the deposition of the top YBCO layer.

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