Study of the material properties and suitability of plasma-deposited fluorine-doped silicon dioxides for low dielectric constant interlevel dielectrics

1995 ◽  
Vol 270 (1-2) ◽  
pp. 498-502 ◽  
Author(s):  
V.L. Shannon ◽  
M.Z. Karim
Keyword(s):  
Dielectric Constant ◽  
Material Properties ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Doped Silicon

Effect of material properties on integration damage in organosilicate glass films

2001 ◽  
Vol 16 (12) ◽  
pp. 3335-3338 ◽  
Author(s):  
E. Todd Ryan ◽  
Jeremy Martin ◽  
Kurt Junker ◽  
Jeff Wetzel ◽  
David W. Gidley ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Material Properties ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Low Density ◽  
Etch Patterns ◽  
Low Dielectric ◽  
Organosilicate Glass

Most organosilicate glass (OSG), low dielectric constant (low-κ) films contain Si–R groups, where R is an organic moiety such as −CH3. The organic component is susceptible to the chemically reactive plasmas used to deposit cap layers, etch patterns, and ash photoresist. This study compares a spin-on, mesoporous OSG film with a completely connected pore structure to both its nonmesoporous counterpart and to another low-density OSG film deposited by plasma-enhanced chemical vapor deposition. The results show that the film with connected pores was much more susceptible to integration damage than were the nonmesoporous OSG films.

Effects of annealing on low dielectric constant carbon doped silicon oxide films

2006 ◽  
Vol 15 (1) ◽  
pp. 133-137 ◽  
Author(s):  
E. Rusli ◽  
M.R. Wang ◽  
T.K.S. Wong ◽  
M.B. Yu ◽  
C.Y. Li
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Low Dielectric Constant ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Doped Silicon

Structure characterization of carbon and fluorine-doped silicon oxide films with low dielectric constant

2001 ◽  
Vol 71 (2) ◽  
pp. 125-130 ◽  
Author(s):  
Shi-Jin Ding ◽  
Li Chen ◽  
Xin-Gong Wan ◽  
Peng-Fei Wang ◽  
Jian-Yun Zhang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Structure Characterization ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Doped Silicon

Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon Oxide

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 408-412 ◽  
Author(s):  
Takashi Usami ◽  
Kimiaki Shimokawa ◽  
Masaki Yoshimaru
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Doped Silicon

A method to derivatize surface silanol groups to Si-alkyl groups in carbon-doped silicon oxides

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 93219-93230 ◽  
Author(s):  
Srikar Rao Darmakkolla ◽  
Hoang Tran ◽  
Atul Gupta ◽  
Shankar B. Rananavare
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Silicon Oxide ◽  
Copper Interconnects ◽  
Low Dielectric Constant ◽  
Silicon Oxides ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Alkyl Groups ◽  
Doped Silicon

A carbon-doped silicon oxide (CDO) finds use as a material with a low dielectric constant (k) for copper interconnects in multilayered integrated circuits (ICs).

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