Transmission electron microscope studies of thin film processing problems

Vacuum ◽  
1991 ◽  
Vol 42 (16) ◽  
pp. 1062
Author(s):  
AH King
Keyword(s):  
Thin Film ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Transmission Electron ◽  
Film Processing ◽  
Thin Film Processing

Conservation of superstructure at Ag/Si(l1l)--R30-Ag Interface observed by UHV-TEM

1999 ◽  
Vol 5 (S2) ◽  
pp. 148-149
Author(s):  
Y. Oshima ◽  
S. Sigeki ◽  
H. Hirayama ◽  
K. Takayanagi
Keyword(s):  
Thin Film ◽  
Electron Microscope ◽  
Surface Structure ◽  
Transmission Electron Microscope ◽  
Lattice Mismatch ◽  
Structural Information ◽  
Substrate Surface ◽  
Interfacial Structure ◽  
Clean Surface ◽  
Transmission Electron

A lot of efforts have been devoted to understanding an interfacial structure. But, there are some difficulties about it as follows: An interfacial structure depends on a surface structure of a substrate and its temperature. Also, an interfacial structure is not homogeneous in general because of a lattice mismatch between a substrate and an overlayer thin film.Ultrahigh vacuum transmission electron microscope (UHV-TEM) is very powerful to observe clean surface and the fabrication during deposition on the surface. Since structural information can be obtained from 10 nm-sized area to a few μm area using TEM, UHVTEM is very appropriate to investigate interfacial structure in detail.In this study, structure of Ag/Si(111)--R30-Ag interface was observed by UHVTEM. Especially, it is interesting whether the superstructure is conserved at this interface or not. The Si(l11)- as the substrate surface was obtained by Ag 1ML deposition on Si(l11) 7×7 surface at 673 K.

Sputter-Deposited Films as Standards for Tem X-Ray Analysis

1980 ◽  
Vol 38 ◽  
pp. 134-135
Author(s):  
A. F. Marshall ◽  
C. Zercher
Keyword(s):  
Thin Film ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Specimen Thickness ◽  
Detector Efficiency ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Image Position ◽  
Deposited Films

Quantitative energy dispersive x-ray analysis in the transmission electron microscope is generally obtained in the form of relative concentrations using the equation: where CA, CB are the concentrations and IA, IB are the peak intensities of elements A and B, and kAB is a constant which is independent of specimen composition and specimen thickness, assuming the thin film criterion is satisfied. kAB may be determined experimentally from standards (Cliff-Lorimer technique1), or may be calculated from considerations of x-ray generation and detector efficiency for the elements being analyzed2. Due to differences in detector parameters, kAB may vary from instrument to instrument.

Observation of Ge2Sb2Te5 thin film phase transition behavior according to the number of cycles using Transmission Electron Microscope and Scanning Probe Microscope

2006 ◽  
Vol 961 ◽  
Author(s):  
Hyunjung Kim ◽  
Sikyung Choi ◽  
Sukhoon Kang ◽  
Kyuhwan Oh ◽  
Soonyong Kweon
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Electron Microscope ◽  
Phase Change ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Phase Transition Behavior ◽  
Transition Behavior ◽  
Transmission Electron

ABSTRACTRecently, the development of information technology (IT) increases the demands of memory devices. Phase change random access memory (PRAM), based on the reversible phase change of the chalcogenide alloy, Ge2Sb2Te5, is widely regarded as a favourite candidate for the next generation memory. Because of PRAM has a simple cell structure with high scalability; it is non-volatile, has a relatively high read/write operation speed (Â50ns). The PRAM operation relies on the fact that chalcogenide-based materials can be reversible switched from an amorphous phase to a crystalline state by an external electrical current. It is important to study the electrical property with set/reset cycles, since film thickness shrinkage occurs with the phase transition.In this work, we fabricated the 100nm amorphous Ge2Sb2Te5 thin film on TiN/Ti/Si substrate using dc-magnetron sputtering. The 50X50§2 isolated Ge2Sb2Te5 cell was lithographed by the lift-off pattern and wet etching. And TiN top electrode was deposited using pattern align process at room temperature after the SiO2 insulator CMP. Phase transition behavior with the set/reset cycle was observed using I-V measurement and transmission electron microscope (TEM) on isolated Ge2Sb2Te5 cell. The set/reset programming was operated using tungsten SPM tip which was fabricated using focused ion beam (FIB) lithography. I-V curve which was observed by the I-V probe clearly showed that the phase transition was occurred by applying the electric field through the I-V probe. The resistivity difference between amorphous and crystal state was more than 102. After the phase transition, it was also demonstrated with transmission electron microscope (TEM) analysis. For the preparation of TEM specimen of the amorphous and crystalline cell, focused ion beam (FIB) lithography was adopted.

FRACTURE TESTING OF NANOSCALE THIN FILMS INSIDE THE TRANSMISSION ELECTRON MICROSCOPE

2010 ◽  
Vol 02 (04) ◽  
pp. 745-758 ◽  
Author(s):  
SANDEEP KUMAR ◽  
M. A. HAQUE
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Grain Boundary Sliding ◽  
Dislocation Motion ◽  
Fracture Mechanisms ◽  
Free Standing ◽  
Transmission Electron ◽  
Average Grain Size

To visualize the fracture mechanisms in nanoscale thin films while measuring their fracture properties, we developed an experimental setup to carry out the experiments in-situ in the transmission electron microscope. The setup includes a 3 mm × 5 mm micro-electro-mechanical testing chip with actuators and sensors to measure fracture toughness of notched specimens. Fracture experiments were performed on about 125 nm thick free-standing aluminum thin film specimens with average grain size of about 50 nm. The specimens fractured at uniform far field stress of 470 MPa with stress intensity factor of 0.8–1.1 MPa m1/2. Commonly cited deformation mechanisms, such as dislocation-based plasticity and grain boundary sliding processes were not observed even at the notch tip, where the calculated stress considering the concentration factor exceeded 4 GPa. We propose that for grain sizes below 50 nm, dislocation motion confined at grain boundaries and grain rotation emerge to be significant processes in thin film deformation.

scholarly journals Orientation Imaging Microscopy of Nanocrystalline Platinum Thin Film Using Transmission Electron Microscope

2010 ◽  
Vol 16 (S2) ◽  
pp. 744-745
Author(s):  
V Kumar
Keyword(s):  
Thin Film ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Orientation Imaging Microscopy ◽  
Orientation Imaging ◽  
Transmission Electron ◽  
Platinum Thin Film

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

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