Wafer charging study on a Varian 160 XP ion implanter with charge-sensitive devices

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(91)96150-j ◽

1991 ◽

Vol 55 (1-4) ◽

pp. 137-142 ◽

Author(s):

R. Nee ◽

S. Mehta ◽

S.B. Felch ◽

S. Kikuchi

Keyword(s):

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The precision implant 9500 plasma flood system — the advanced solution to wafer charging

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(94)00448-x ◽

1995 ◽

Vol 96 (1-2) ◽

pp. 30-33 ◽

Author(s):

H. Ito ◽

T. Kamata ◽

J. England ◽

I. Fotheringham ◽

F. Plumb ◽

...

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Studies Of Plasma Uniformity And Global Wafer Charging In A High Density, Inductively Coupled Metal Etcher

2nd International Symposium on Plasma Process-Induced Damage ◽

10.1109/ppid.1997.596765 ◽

1997 ◽

Keyword(s):

High Density ◽

Inductively Coupled ◽

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A Mechanism of Gate Oxide Deterioration Caused by Wafer Charging during Ion Implantation

10.7567/ssdm.1990.c-2-6 ◽

1990 ◽

Author(s):

Hirotaka MUTO ◽

Haruhisa FUJII ◽

Koichiro NAKANISHI ◽

Shingo IKEDA

Keyword(s):

Ion Implantation ◽

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Neutralization of wafer charging in nitrogen gas

IEEE Transactions on Semiconductor Manufacturing ◽

10.1109/66.175368 ◽

1992 ◽

Vol 5 (4) ◽

pp. 359-367 ◽

Author(s):

H. Inaba ◽

T. Ohmi ◽

M. Morita ◽

M. Nakamura ◽

T. Yoshida ◽

...

Keyword(s):

Nitrogen Gas ◽

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Characterization of wafer charging mechanisms and oxide survival prediction methodology

Proceedings of 1994 IEEE International Reliability Physics Symposium RELPHY-94 ◽

10.1109/relphy.1994.307816 ◽

1994 ◽

Author(s):

W. Lukaszek ◽

W. Dixon ◽

M. Vella ◽

C. Messick ◽

S. Reno ◽

...

Keyword(s):

Survival Prediction ◽

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Evaluation of different wafer charging metrology protocols for thin dielectrics

2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) ◽

10.1109/iit.2000.924215 ◽

2003 ◽

Author(s):

Ziwei Fang ◽

S. Felch ◽

J. Weeman ◽

S. Mehta

Keyword(s):

Thin Dielectrics ◽

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Study of CDSEM measurement issue caused by wafer charging

2015 China Semiconductor Technology International Conference ◽

10.1109/cstic.2015.7153367 ◽

2015 ◽

Author(s):

Qiang Zhang ◽

Guogui Deng ◽

Bin Xing ◽

Jingan Hao ◽

Qiang Wu ◽

...

Keyword(s):

Measurement Issue ◽

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The Role of “Antenna” Structure on Thin Oxide Damage from Plasma Induced Wafer Charging

MRS Proceedings ◽

10.1557/proc-265-231 ◽

1992 ◽

Vol 265 ◽

Author(s):

Sychyi Fang ◽

James P. McVittie

Keyword(s):

Antenna Structure ◽

Wafer Charging ◽

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Wafer charging and beam interactions in ion implantation

Microelectronics Reliability ◽

10.1016/0026-2714(86)90191-5 ◽

1986 ◽

Vol 26 (4) ◽

pp. 797

Keyword(s):

Ion Implantation ◽

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Instrumentation for neutralization of wafer charging

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(85)90641-x ◽

1985 ◽

Vol 6 (1-2) ◽

pp. 243-249 ◽

Author(s):

J.C. Cheng ◽

G.R. Tripp ◽

J.A. Glaze ◽

J.R. Golin

Keyword(s):

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