Synchrotron radiation investigation and surface spectroscopy studies of prototypical systems: Lead-semiconductor interfaces

1990 ◽  
Vol 41-42 ◽  
pp. 25-37 ◽  
Author(s):  
G. Le Lay ◽  
K. Hricovini ◽  
J.E. Bonnet
Keyword(s):  
Synchrotron Radiation ◽  
Semiconductor Interfaces ◽  
Surface Spectroscopy ◽  
Spectroscopy Studies

Photoelectron spectroscopy studies of the formation of the Au-Si(100) interface using synchrotron radiation

1989 ◽  
Vol 211-212 ◽  
pp. 630-636 ◽  
Author(s):  
K. Hricovini ◽  
J.E. Bonnet ◽  
B. Carrière ◽  
J.P. Deville ◽  
M. Hanbücken ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Photoelectron Spectroscopy ◽  
Spectroscopy Studies

Surface spectroscopy studies of the oxidation behavior of uranium

1982 ◽  
Vol 105 (2-3) ◽  
pp. 196-200 ◽  
Author(s):  
J. Bloch ◽  
U. Atzmony ◽  
M.P. Dariel ◽  
M.H. Mintz ◽  
N. Shamir
Keyword(s):  
Oxidation Behavior ◽  
Surface Spectroscopy ◽  
Spectroscopy Studies

Cathodoluminescence spectroscopy studies of laser‐annealed metal–semiconductor interfaces

1985 ◽  
Vol 3 (3) ◽  
pp. 1011-1015 ◽  
Author(s):  
L. J. Brillson ◽  
H. W. Richter ◽  
M. L. Slade ◽  
B. A. Weinstein ◽  
Y. Shapira
Keyword(s):  
Semiconductor Interfaces ◽  
Cathodoluminescence Spectroscopy ◽  
Spectroscopy Studies

New Electronic Properties of Metal / III-V Compound Semiconductor Interfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
L. J. Brillson ◽  
R. E. Viturro ◽  
S. Chang ◽  
J. L. Shaw ◽  
C. Mailhiot ◽  
...  
Keyword(s):  
Compound Semiconductor ◽  
Photoemission Spectroscopy ◽  
Dominant Effect ◽  
Band Bending ◽  
X Ray ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Cathodoluminescence Spectroscopy ◽  
Wide Range ◽  
Spectroscopy Studies

ABSTRACTRecent studies of interface states and band bending at metal / III-V compound semiconductor interfaces reveal that these junctions are much more controllable and predictable than commonly believed. Soft x-ray photoemission spectroscopy studies demonstrate a wide range of band bending for metals on many III-V compounds, including GaAs. Cathodoluminescence spectroscopy measurements show that discrete states form at the microscopic junction which can have a dominant effect on the band bending properties. Internal photoemission measurements confirm the bulk barrier heights inferred by photoemission methods. After separating out surface chemical and bulk crystal quality effects, one finds simple, predictive barrier height variations which follow classical Schottky behavior.

Sign in / Sign up

Export Citation Format

Share Document