Characterization of electroless nickel and copper coatings: An x-ray photoelectron spectroscopy study

1987 ◽  
Vol 30 (2) ◽  
pp. 137-146 ◽  
Author(s):  
N.B.S. Nageswara Rao ◽  
R.H. Jog ◽  
S. Badrinarayanan ◽  
A.B. Mandale ◽  
A.P.B. Sinha
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electroless Nickel ◽  
Spectroscopy Study ◽  
X Ray ◽  
Copper Coatings

Photoelectron spectroscopy study of amorphous silicon-carbon alloys deposited by plasma-enhanced chemical vapor deposition

1996 ◽  
Vol 11 (12) ◽  
pp. 3017-3023 ◽  
Author(s):  
G. Cicala ◽  
G. Bruno ◽  
P. Capezzuto ◽  
P. Favia
Keyword(s):  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Optical Transmission ◽  
Chemical Vapor ◽  
Spectroscopy Study ◽  
Air Oxidation ◽  
X Ray ◽  
Silicon Carbon

X-ray photoelectron spectroscopy (XPS) coupled with Fourier transform infrared (FTIR) and optical transmission spectroscopy (OTS) has been used for the characterization of silicon-carbon alloys (a-Si1−xCx: H, F) deposited via plasma, by varying the CH4 amount in SiF4–CH4–H2 feeding mixture. XPS measurements have shown that carbon-rich a-Si1−xCx: H, F alloys include large amounts of fluorine (>11 at. %), which make the films susceptible to the air oxidation. In addition, the effect of the alloying partner carbon on the valence band (VB) and on the VB edge position of amorphous silicon is also described.

scholarly journals Characterization of Ni2P(10-10): Soft X-Ray Photoelectron Spectroscopy Study

2012 ◽  
Vol 10 ◽  
pp. 45-49 ◽  
Author(s):  
Saori Imanishi ◽  
Shiori Munakata ◽  
Yohei Kakefuda ◽  
Kazuyuki Edamoto ◽  
Ken-ichi Ozawa
Keyword(s):  
Photoelectron Spectroscopy ◽  
Spectroscopy Study ◽  
X Ray

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

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