X-ray Standing Waves and the critical sample thickness for Total-reflection

AbstractThe angular dependence of Total-reflection X-Ray Fluorescence intensities can behave in various ways. The variety is discussed by examining the x-ray intensity distribution in the material under investigation. It is shown that for thin layers on solids, interference fringes are present due to x-ray standing waves. This phenomenon is exploited to determine the depth distribution of elements in layered specimens.

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X-ray standing waves in bragg diffraction and in total reflection regions using langmuir-blodgett multilayers

Thin Solid Films ◽

10.1016/s0040-6090(05)80049-5 ◽

1990 ◽

Vol 193-194 ◽

pp. 395-400 ◽

Cited By ~ 8

Author(s):

S.I. Zheludeva ◽

S. Lagomarsino ◽

N.N. Novikova ◽

M.V. Kovalchuk ◽

F. Scarinci

Keyword(s):

Standing Waves ◽

Total Reflection ◽

Bragg Diffraction ◽

X Ray ◽

Langmuir Blodgett

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Characterization of Near Surface Layers by Means of Total Reflection X-Ray Fluorescence Spectrometry

Advances in X-ray Analysis ◽

10.1154/s0376030800013136 ◽

1991 ◽

Vol 35 (B) ◽

pp. 941-946 ◽

Cited By ~ 1

Author(s):

H. Schwenke ◽

R. Gutschke ◽

J. Knoth

Keyword(s):

Silicon Substrate ◽

Standing Waves ◽

Total Reflection ◽

Fluorescence Spectrometry ◽

Evaluation Procedure ◽

Surface Layers ◽

Near Surface ◽

X Ray ◽

20 Nm

AbstractTotal Reflection X-ray Fluorescence Spectrometry (TXRF) has been used for the characterisation of a 20 nm thick Ni/Fe/Cr-layer on a silicon substrate. Instrumental aspects of the technique as well as the data evaluation procedure on the basis of modelling calculations are outlined in this paper. The effect of standing waves is discussed by means of the selected example. This particular layer serves also as an illustration of the capabilities and limitations of TXRF. At least three surface parameters are covered by the technique, elemental composition, density and layer thickness.

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Contribution of x-ray total reflection to the background intensity in EPMA

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100134600 ◽

1990 ◽

Vol 48 (2) ◽

pp. 202-203

Author(s):

Werner P. Rehbach ◽

Peter Karduck

Keyword(s):

Atomic Number ◽

Target Material ◽

Total Reflection ◽

Background Intensity ◽

X Rays ◽

Characteristic Radiation ◽

X Ray

In the EPMA of soft x rays anomalies in the background are found for several elements. In the literature extremely high backgrounds in the region of the OKα line are reported for C, Al, Si, Mo, and Zr. We found the same effect also for Boron (Fig. 1). For small glancing angles θ, the background measured using a LdSte crystal is significantly higher for B compared with BN and C, although the latter are of higher atomic number. It would be expected, that , characteristic radiation missing, the background IB (bremsstrahlung) is proportional Zn by variation of the atomic number of the target material. According to Kramers n has the value of unity, whereas Rao-Sahib and Wittry proposed values between 1.12 and 1.38 , depending on Z, E and Eo. In all cases IB should increase with increasing atomic number Z. The measured values are in discrepancy with the expected ones.

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