THE STUDY OF THE SPECIFIC RESISTANCE OF BISMUTH CRYSTALS AND ITS CHANGE IN STRONG MAGNETIC FIELDS AND SOME ALLIED PROBLEMS

In a paper published last year the author described a systematic research on the change of resistance which occurs in a number of metals in strong magnetic fields. As a result of these investigations the following formulæ expressing the relative change of resistance ∆R/R o with the field H were found to hold :— ∆R/R o = β' H 2 /3H k H ≼ H k , (1) and ∆R/R o = β' ( H-H k +H k 2 /3H) H ≽ H k , (2) where β' and H k are constant for a given sample of a metal and at a given temperature. These two expressions form a continuous curve, and it is evident that the formula (1) which holds for the weaker fields, shows that the resistance increases as the square of H, and formula (2) indicates that the change of resistance in strong fields approaches a linear law. These two formulæ have been obtained mathematically on the following assumption. It is known that in a metal which is not in a perfect crystalline state, and which contains even small traces of impurities, there exists a disturbance which increases its specific resistance. My hypothesis was that a magnetic field increases the specific resistance in a similar way to these imperfections, so that they are equivalent to an internal magnetic field H k , orientated at random. Then, if the metal is brought under the influence of an outside magnetic field H, the increase of resistance is such as would be produced by a combination of the two fields. Further, I assumed that the increase of resistance is proportional to the magnetic field, and this led to formulæ (1) and (2) which appear to fit all my experimental results very well. Several important consequences follow from this hypothesis.


2019 ◽  
Vol 19 (3) ◽  
pp. 246-253
Author(s):  
Yu.М. Khoverko ◽  
N.О. Shcherban

Complex research of silicon microcrystals with specific resistance from ρ300K = 0.025 Ohm × cm to ρ300K =0.007 Ohm × cm doped with boron transport impurity to concentrations corresponding to the transition of metaldielectric and modified transition metal nickel at low temperatures to the temperature of liquefied heliumT = 4.2 K in magnetic fields up to 14 Tl. The features of electrophysical characteristics of samples at lowtemperatures in strong magnetic fields up to 14 Tl are determined due to the influence of a magnetic impurity insemiconductor-diluted magnetism and the use of such crystals in sensors of physical quantities (temperature,magnetic field, deformation) is proposed.


1960 ◽  
Vol 70 (4) ◽  
pp. 693-714 ◽  
Author(s):  
G.M. Strakhovskii ◽  
N.V. Kravtsov

2002 ◽  
Vol 172 (11) ◽  
pp. 1303 ◽  
Author(s):  
Anatolii K. Zvezdin ◽  
Viktor V. Kostyuchenko ◽  
V.V. Platonov ◽  
V.I. Plis ◽  
A.I. Popov ◽  
...  

Both the penetrating power of the cosmic rays through material ab­sorbers and their ability to reach the earth in spite of its magnetic field, make it certain that the energy of many of the primary particles must reach at least 10 11 e-volts. However, the energy measurements by Kunze, and by Anderson, using cloud chambers in strong magnetic fields, have extended only to about 5 x 10 9 e-volts. Particles of greater energy were reported, but the curvature of their tracks was too small to be measured with certainty. We have extended these energy measurements to somewhat higher energies, using a large electro-magnet specially built for the purpose and described in Part I. As used in these experiments, the magnet allowed the photography of tracks 17 cm long in a field of about 14,000 gauss. The magnet weighed about 11,000 kilos and used a power of 25 kilowatts.


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