The Atomic Structure and Atomic Layer Compositional Analysis of Thin Solid Films Using the Time-of-Flight Atom-Probe Field Ion Microscopy

1988 ◽  
pp. 449-478
Author(s):  
T.T. TSONG
Keyword(s):  
Atomic Structure ◽  
Time Of Flight ◽  
Compositional Analysis ◽  
Atomic Layer ◽  
Atom Probe ◽  
Probe Field ◽  
Thin Solid Films ◽  
Field Ion Microscopy ◽  
Solid Films ◽  
Ion Microscopy

Atom-probe field ion microscope analysis of surfaces of materials

1989 ◽  
Vol 4 (6) ◽  
pp. 1549-1559 ◽  
Author(s):  
Tien T. Tsong ◽  
Chong-lin Chen ◽  
Jiang Liu
Keyword(s):  
Specific Binding ◽  
Atomic Layer ◽  
Atom Probe ◽  
Cluster Ions ◽  
Probe Field ◽  
Field Ion Microscopy ◽  
Semiconductor Interfaces ◽  
Compositional Changes ◽  
Ion Microscopy ◽  
Field Ion Microscope

Our recent applications of the atom-probe field ion microscope to the study of physics and chemistry of materials at the atomic level are summarized. The materials applicability of field ion microscopy has recently been extended to silicon, silicide, graphite, high Tc superconductors, and other materials. Atom-probe field ion microscopy has been used for atomic layer by atomic layer chemical analysis of surfaces in alloy and impurity segregations, for analyzing the compositional changes across metal-semiconductor interfaces, and for studying formation of cluster ions in laser stimulated field desorption. The energetics of atoms in solids and on surfaces can be studied by a direct kinetic energy analysis of field desorbed ions using a high resolution pulsed-laser time-of-flight atom-probe and by other field ion microscope measurements. The site specific binding energy of surface atoms can be measured at low temperature, where the atomic structure of the surface is still perfectly defined, to an accuracy of about 0.1 to 0.3 eV.

Characterization of Internal Interfaces by Atom Probe Field Ion Microscopy

1992 ◽  
Vol 295 ◽  
Author(s):  
M. K. Miller ◽  
Raman Jayaram
Keyword(s):  
Grain Boundaries ◽  
Compositional Analysis ◽  
Atom Probe ◽  
Probe Field ◽  
Field Ion Microscopy ◽  
Surrounding Matrix ◽  
Wide Range ◽  
Ion Microscopy ◽  
Field Ion Microscope

AbstractThe near atomic spatial resolution of the atom probe field ion microscope permits the elemental characterization of internal interfaces, grain boundaries and surfaces to be performed in a wide variety of materials. Information such as the orientation relationship between grains, topology of the interface, and the coherency of small precipitates with the surrounding matrix may be obtained from field ion microscopy. Details of the solute segregation may be obtained at the plane of the interface and as a function of distance from the interface for all elements simultaneously from atom probe compositional analysis. The capabilities and limitations of the atom probe technique in the characterization of internal interfaces is illustrated with examples of grain boundaries and interphase interfaces in a wide range of materials including intermetallics, model alloys, and commercial steels.

New time‐of‐flight electronics for atom‐probe field‐ion microscopy

1994 ◽  
Vol 65 (6) ◽  
pp. 1973-1977 ◽  
Author(s):  
D. K. Chan ◽  
B. M. Davis ◽  
D. N. Seidman
Keyword(s):  
Time Of Flight ◽  
Atom Probe ◽  
Probe Field ◽  
Field Ion Microscopy ◽  
Ion Microscopy ◽  
New Time

Atom-probe field ion microscopy

1992 ◽  
Vol 107 (3-6) ◽  
pp. 95-104 ◽  
Author(s):  
Manfred Leisch
Keyword(s):  
Atom Probe ◽  
Probe Field ◽  
Field Ion Microscopy ◽  
Ion Microscopy
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