Fast etching of sapphire by a visible range quasi-cw laser radiation

1996 ◽  
pp. 491-495
Author(s):  
S.I. Dolgaev ◽  
A.A. Lyalin ◽  
A.V. Simakin ◽  
G.A. Shafeev
1996 ◽  
Vol 96-98 ◽  
pp. 491-495 ◽  
Author(s):  
S.I. Dolgaev ◽  
A.A. Lyalin ◽  
A.V. Simakin ◽  
G.A. Shafeev

1977 ◽  
Vol 7 (10) ◽  
pp. 1306-1308
Author(s):  
Yu G Grin' ◽  
Yu N Karamzin ◽  
Anatolii P Sukhorukov

1992 ◽  
Vol 22 (9) ◽  
pp. 847-852 ◽  
Author(s):  
N K Makashev ◽  
E S Asmolov ◽  
V V Blinkov ◽  
A Yu Boris ◽  
O G Buzykin ◽  
...  

1999 ◽  
Vol 35 (9) ◽  
pp. 721 ◽  
Author(s):  
V. Petrov ◽  
R. Komatsu ◽  
T. Sugawara

1983 ◽  
Vol 29 ◽  
Author(s):  
Klaus Piglmayer ◽  
Josef Doppelbauer ◽  
Dieter BÄuerle

ABSTRACTTemperature distributions induced by cw laser radiation absorbed on the surface of combined structures, consisting of discs or of stripes on semi - infinite plane substrates, are calculated for different material parameters and different geometries. The relevance of the numerical results is demonstrated by comparison with earlier experimental data obtained in pyrolytic laser-induced chemical vapor deposition.


2007 ◽  
Vol 131-133 ◽  
pp. 559-562 ◽  
Author(s):  
Arthur Medvid ◽  
Igor Dmitruk ◽  
Pavels Onufrijevs ◽  
Iryna Pundyk

The aim of this work is to study optical properties of Si nanohills formed on the SiO2/Si interface by the pulsed Nd:YAG laser radiation. Nanohills which are self-organized on the surface of Si, are characterized by strong photoluminescence in the visible range of spectra with long wing in the red part of spectra. This peculiarity is explained by Quantum confinement effect in nanohillsnanowires with graded diameter. We have found a new method for graded band gap semiconductor formation using an elementary semiconductor. Graded change of band gap arises due to Quantum confinement effect.


2016 ◽  
Vol 83 ◽  
pp. 317-327 ◽  
Author(s):  
Christian Brecher ◽  
Henning Janssen ◽  
Markus Eckert ◽  
Florian Schmidt

1981 ◽  
Vol 11 (3) ◽  
pp. 388-389
Author(s):  
V G Arkhipkin ◽  
N P Makarov ◽  
A K Popov ◽  
V P Timofeev ◽  
V Sh Épshteĭn

2018 ◽  
Vol 11 (1) ◽  
pp. 46-50
Author(s):  
Nikolay A Sergeev ◽  
Maxim S Shestakov ◽  
Elisaveta D Fomina

The influence of three types of low-intensive laser radiation to healing of lower extremities venous trophic ulcers in 82 patients was estimated (class VI, CEAP classification): the continuous radiation helium-neon laser (subgroup I), the modulated infrared laser radiation (subgroup II) and the combined laser radiation (pulse infrared radiation and continuous radiation of visible range) (subgroup III). The therapeutic laser devices such as "AFDL-1" (wavelength – 0,63 microns), "Scalar-1/40" (wavelength – 0,89 microns) and "Ulan-BL-20" (lengths of waves: 0,44; 0,52; 0,57; 0,64 and 0,89 microns) were used for conservative treatment of trophic ulcers.  The planimetric methods such as evaluation of the ulcer defects area and speed of its epithelization in dynamics were used for objective comparison of different types of laser radiation efficiency. Due to this treatment in all patients the complete healing of trophic ulcers was achieved. In patients of subgroup I the average speed of epithelization was 0,26 ± 0,05 cm²/days, in patients of subgroup II – 0,17 ± 0,06 cm²/days, in patients of subgroup III – 0,33 ± 0,05 cm²/days. The advantages of laser radiation in the visible range in isolated (helium-neon laser) and combined options are revealed. The best results are received in case of combined laser radiation generated by portable devices which provide distribution of low-intensive laser radiation within all effected tissues. The combination of traditional medical methods with combined laser radiation is expedient in conservative treatment of lower extremities venous trophic ulcers.


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