Self-limited grain growth, dielectric, leakage and ferroelectric properties of nanocrystalline BiFeO3 thin films by chemical solution deposition

The critical role of gelation is demonstrated in order to achieve epitaxial (001)-BFO thin films with robust room-temperature ferroelectric properties.

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Enhanced ferroelectric properties of Cr-doped BiFeO3 thin films grown by chemical solution deposition

Applied Physics Letters ◽

10.1063/1.2189453 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132901 ◽

Cited By ~ 207

Author(s):

Jong Kuk Kim ◽

Sang Su Kim ◽

Won-Jeong Kim ◽

Amar S. Bhalla ◽

Ruyan Guo

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Ferroelectric Properties ◽

Chemical Solution ◽

Solution Deposition ◽

Bifeo3 Thin Films

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Effects of Excess Bismuth Content in Precursor Solutions on Ferroelectric Properties of BiFeO3 Thin Films Prepared by a Chemical Solution Deposition

Ferroelectrics Letters Section ◽

10.1080/07315170701500833 ◽

2007 ◽

Vol 34 (3-4) ◽

pp. 84-94 ◽

Cited By ~ 4

Author(s):

S. S. KIM ◽

E. J. CHOI ◽

A. S. BHALLA

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Ferroelectric Properties ◽

Chemical Solution ◽

Solution Deposition ◽

Bismuth Content ◽

Bifeo3 Thin Films

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Chemical solution deposition derived (001)-oriented epitaxial BiFeO3 thin films with robust ferroelectric properties using stoichiometric precursors (invited)

Journal of Applied Physics ◽

10.1063/1.4891311 ◽

2014 ◽

Vol 116 (6) ◽

pp. 066810 ◽

Cited By ~ 13

Author(s):

Qi Zhang ◽

Nagarajan Valanoor ◽

Owen Standard

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Ferroelectric Properties ◽

Chemical Solution ◽

Solution Deposition ◽

Bifeo3 Thin Films

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Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition

Applied Physics Letters ◽

10.1063/1.2218819 ◽

2006 ◽

Vol 88 (26) ◽

pp. 262908 ◽

Cited By ~ 295

Author(s):

S. K. Singh ◽

H. Ishiwara ◽

K. Maruyama

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Room Temperature ◽

Ferroelectric Properties ◽

Chemical Solution ◽

Solution Deposition ◽

Bifeo3 Thin Films ◽

Pt Electrodes

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Substitution effects on the ferroelectric properties of BiFeO3 thin films prepared by chemical solution deposition

Journal of Applied Physics ◽

10.1063/1.2404771 ◽

2007 ◽

Vol 101 (1) ◽

pp. 014108 ◽

Cited By ~ 34

Author(s):

Jong Kuk Kim ◽

Sang Su Kim ◽

Won-Jeong Kim ◽

Amar S. Bhalla

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Ferroelectric Properties ◽

Substitution Effects ◽

Chemical Solution ◽

Solution Deposition ◽

Bifeo3 Thin Films

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Enhanced ferroelectric properties in Aurivillius PbxBi6−xFe0.5Co0.5Ti4O18 thin films prepared by chemical solution deposition

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-021-05991-7 ◽

2021 ◽

Author(s):

Qianqian Gao ◽

Yuqiang Dai ◽

Xile Wei ◽

Changping Zhou ◽

Wenfeng Gong ◽

...

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Ferroelectric Properties ◽

Chemical Solution ◽

Solution Deposition

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An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

Journal of Materials Research ◽

10.1557/jmr.1999.0594 ◽

1999 ◽

Vol 14 (11) ◽

pp. 4395-4401 ◽

Cited By ~ 5

Author(s):

Seung-Hyun Kim ◽

D. J. Kim ◽

K. M. Lee ◽

M. Park ◽

A. I. Kingon ◽

...

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Low Voltage ◽

Ferroelectric Properties ◽

Chemical Solution ◽

Solution Deposition ◽

Chemical Solution Deposition Method ◽

Low Leakage ◽

Low Leakage Current ◽

Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

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Fabrication of V-Substituted (Bi,M)4Ti3O12 [M = Lanthanoids] Thin Films by Chemical Solution Deposition Method

MRS Proceedings ◽

10.1557/proc-688-c2.3.1 ◽

2001 ◽

Vol 688 ◽

Cited By ~ 2

Author(s):

H. Uchida ◽

H. Yoshikawa ◽

I. Okada ◽

H. Matsuda ◽

T. Iijima ◽

...

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Bismuth Titanate ◽

Ferroelectric Properties ◽

Ferroelectric Materials ◽

Processing Temperature ◽

Chemical Solution ◽

Si Substrate ◽

Solution Deposition ◽

Chemical Solution Deposition Method

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.

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