Low-temperature MOVPE growth of ZnO thin films by using a buffer layer

2006 ◽  
Vol 252 (16) ◽  
pp. 5926-5929 ◽  
Author(s):  
W.Z. Xu ◽  
Z.Z. Ye ◽  
L. Jiang ◽  
Y.J. Zeng ◽  
L.P. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Buffer Layer ◽  
Zno Thin Films ◽  
Movpe Growth

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by low-pressure MOCVD

2004 ◽  
Vol 262 (1-4) ◽  
pp. 456-460 ◽  
Author(s):  
Yuantao Zhang ◽  
Guotong Du ◽  
Boyang Liu ◽  
HuiChao Zhu ◽  
Tianpeng Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Low Pressure ◽  
Zno Thin Films ◽  
Low Pressure Mocvd ◽  
Buffer Layer Thickness ◽  
Zno Buffer Layer

Low temperature electrochemical deposition of nanoporous ZnO thin films as novel NO2 sensors

2013 ◽  
Vol 90 ◽  
pp. 530-534 ◽  
Author(s):  
Shouli Bai ◽  
Chuanzhen Sun ◽  
Teng Guo ◽  
Ruixian Luo ◽  
Yuan Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electrochemical Deposition ◽  
Zno Thin Films

ZnO thin films fabricated by chemical bath deposition, used as buffer layer in organic solar cells

2009 ◽  
Vol 255 (13-14) ◽  
pp. 6615-6619 ◽  
Author(s):  
Y. Lare ◽  
A. Godoy ◽  
L. Cattin ◽  
K. Jondo ◽  
T. Abachi ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Buffer Layer ◽  
Chemical Bath Deposition ◽  
Organic Solar Cells ◽  
Zno Thin Films

Low-temperature deposition of ZnO thin films on PET and glass substrates by DC-sputtering technique

2006 ◽  
Vol 496 (1) ◽  
pp. 112-116 ◽  
Author(s):  
A.N. Banerjee ◽  
C.K. Ghosh ◽  
K.K. Chattopadhyay ◽  
Hideki Minoura ◽  
Ajay K. Sarkar ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Zno Thin Films ◽  
Glass Substrates ◽  
Dc Sputtering ◽  
Low Temperature Deposition ◽  
Temperature Deposition ◽  
Dc Sputtering Technique

Growth of Heteroepitaxial ZnO Thin Films on GaN-Buffered Al2O3 (0001) Substrates by Low-Temperature Hydrothermal Synthesis at 90 °C

2007 ◽  
Vol 17 (3) ◽  
pp. 463-471 ◽  
Author(s):  
J. H. Kim ◽  
E.-M. Kim ◽  
D. Andeen ◽  
D. Thomson ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrothermal Synthesis ◽  
Low Temperature ◽  
Zno Thin Films

Molecular beam epitaxy of high-quality CuI thin films on a low temperature grown buffer layer

2020 ◽  
Vol 116 (19) ◽  
pp. 192105 ◽  
Author(s):  
S. Inagaki ◽  
M. Nakamura ◽  
N. Aizawa ◽  
L. C. Peng ◽  
X. Z. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Quality

Enhancement of Electrical Properties of ZnO: Al Thin Films on Transparent TPT Substrates by SiO2 Buffer Layers

2013 ◽  
Vol 774-776 ◽  
pp. 954-959
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Average Transmittance ◽  
Doped Zno

The electrical properties need to be improved, although Aluminum doped ZnO thin films (ZnO: Al) have been successfully deposited on transparent TPT substrates by our group. In this paper, ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. Compared with ZAO film without buffer layer, the lattice constant distortion of the film with buffer layer was decreased and the compressive stress was decreased by 9.2%, reaching to 0.779GPa. The carrier concentration and hall mobility of the film with buffer layer were both increased; especially the carrier concentration was enhanced by two orders of magnitude, reaching to 2.65×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 7.6×10-3 Ω·cm and the average transmittance was over 70% in the range of 450~900nm.

Low-temperature preparation of transparent conductive Al-doped ZnO thin films by a novel sol–gel method

2014 ◽  
Vol 49 (14) ◽  
pp. 4722-4734 ◽  
Author(s):  
Dongyun Guo ◽  
Kuninori Sato ◽  
Shingo Hibino ◽  
Tetsuya Takeuchi ◽  
Hisami Bessho ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Low Temperature Preparation ◽  
Doped Zno ◽  
Temperature Preparation
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