Electrical and optical properties of Al-doped ZnO thin films by sol–gel process

2007 ◽  
Vol 253 (11) ◽  
pp. 4911-4916 ◽  
Author(s):  
Young-Sung Kim ◽  
Weon-Pil Tai
2014 ◽  
Vol 23 (4) ◽  
pp. 047805 ◽  
Author(s):  
Meng-Meng Cao ◽  
Xiao-Ru Zhao ◽  
Li-Bing Duan ◽  
Jin-Ru Liu ◽  
Meng-Meng Guan ◽  
...  

2011 ◽  
Vol 509 (30) ◽  
pp. 7854-7860 ◽  
Author(s):  
A. Esmaielzadeh Kandjani ◽  
M. Farzalipour Tabriz ◽  
O. Mohammad Moradi ◽  
H.R. Rezaeian Mehr ◽  
S. Ahmadi Kandjani ◽  
...  

2007 ◽  
Vol 40 (18) ◽  
pp. 5592-5597 ◽  
Author(s):  
Qingjiang Yu ◽  
Wuyou Fu ◽  
Cuiling Yu ◽  
Haibin Yang ◽  
Ronghui Wei ◽  
...  

2012 ◽  
Vol 557-559 ◽  
pp. 1641-1644
Author(s):  
Zhan Chang Pan ◽  
Xin Long Tian ◽  
Guang Hui Hu ◽  
Chu Min Xiao ◽  
Zhi Gang Wei ◽  
...  

Al–Sn co-doped ZnO thin films were fabricated onto quartz glass substrates by the sol-gel method. The surface morphology, electrical and optical properties at different post-deposition heating temperatures were investigated. The grains of preferred c-axis showed a well-mixed microstructure and the peak height was enhanced with the post-deposition heating temperature increasing from 400°C to 600°C. Doped films showed a preferential orientation along the (002) plane, while the preferential orientation changed to the (101) plane when temperature was higher than 500°C. The lowest resistivity 6×10–3Ω•cm was observed from samples made at 500°C, with an average 91.2% optical transmittance in the visible range. In this study, optical band gap of all the doped films were broadened, regardless of post–deposition heating temperature.


2011 ◽  
Vol 49 (4) ◽  
pp. 477-486 ◽  
Author(s):  
Jianguo Lv ◽  
Kai Huang ◽  
Xuemei Chen ◽  
Jianbo Zhu ◽  
Lijun Wang ◽  
...  

2014 ◽  
Vol 64 (1) ◽  
pp. 109-113 ◽  
Author(s):  
Hyunsik Yoon ◽  
Soaram Kim ◽  
Hyunggil Park ◽  
Giwoong Nam ◽  
Yangsoo Kim ◽  
...  

2015 ◽  
Vol 1109 ◽  
pp. 549-553
Author(s):  
Shafura Karim ◽  
Uzer Mohd Noor ◽  
Mohamad Hafiz Mamat ◽  
Shuhaimi Abu Bakar ◽  
Salman A.H. Alrokayan ◽  
...  

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc acetate dehydrate as a starting material by sol-gel immersion method. The doping concentrations were varied at 0 at.%, 0.5 at.%, 1.0 at.%, 2.0 at.%, 3.0 at.% and 4.0 at.%. The synthesized samples were characterized by current-voltage (I-V) measurement and UV-VISS spectrometer.


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