Effect of substrate bias voltage on the structure, electric and dielectric properties of TiO2 thin films by DC magnetron sputtering

2011 ◽  
Vol 258 (5) ◽  
pp. 1789-1796 ◽  
Author(s):  
M. Chandra Sekhar ◽  
P. Kondaiah ◽  
S.V. Jagadeesh Chandra ◽  
G. Mohan Rao ◽  
S. Uthanna
2019 ◽  
Vol 70 (7) ◽  
pp. 117-121 ◽  
Author(s):  
Hind Zegtouf ◽  
Nadia Saoula ◽  
Mourad Azibi ◽  
Larbi Bait ◽  
Noureddine Madaoui ◽  
...  

Abstract ZrO2 thin films were deposited on 316L stainless steel substrate by a radio-frequency magnetron sputtering system. The substrate bias voltage, the working gas rate and the reactive gas fraction in the gas mixture were varied. These variations produce a variation in the deferent properties of the obtained films. The deposited films were characterized by X-Rays Diffraction, Atomic Force Microscopy, nano-indentation and potentiodynamic polarization. The experimental results show that the film thickness and the roughness of the films are highly influenced by the plasma parameters. XRD results show that the monoclinic phase is predominant in unbiased deposited films. The best anti-corrosion performance and hardness were obtained for ZrO2 deposited with a substrate bias voltage of −75 V, Ar rate of 6 sccm and oxygen fraction of 25%.


2019 ◽  
Vol 70 (7) ◽  
pp. 112-116
Author(s):  
Mourad Azibi ◽  
Nadia Saoula ◽  
Hamid Aknouche

Abstract In order to study the influence of the substrate bias on the properties of ZrN thin films deposited by radio-frequency magnetron sputtering for biomedical application. Films of ZrN were grown onto 316L stainless steel substrate using radio-frequency (rf) magnetron sputtering from a pure zirconium target in Ar - N2 gas mixture. The substrate bias voltage was varied from 0 to −100 V, which produces a variation in the structural and electrochemical properties of the obtained films. The deposited films were characterized by X-Rays Diffraction, Atomic Force Microscopy, scanning force microscopy and potentiodynamic polarization.


2012 ◽  
Author(s):  
A. Mallikarjuna Reddy ◽  
Ch. Seshendra Reddy ◽  
Y. Ashok Kumar Reddy ◽  
R. Lydia ◽  
P. Sreedhara Reddy ◽  
...  

2012 ◽  
Vol 52 (6) ◽  
pp. 1131-1142 ◽  
Author(s):  
W.J. Yang ◽  
C.Y. Hsu ◽  
Y.W. Liu ◽  
R.Q. Hsu ◽  
T.W. Lu ◽  
...  

2018 ◽  
Vol 455 ◽  
pp. 267-275 ◽  
Author(s):  
Davide Casotti ◽  
Valentina Orsini ◽  
Alessandro di Bona ◽  
Sandra Gardonio ◽  
Mattia Fanetti ◽  
...  

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