Sol–gel derived Al and Ga co-doped ZnO thin films: An optoelectronic study

2014 ◽  
Vol 290 ◽  
pp. 252-259 ◽  
Author(s):  
Reza Ebrahimifard ◽  
Mohammad Reza Golobostanfard ◽  
Hossein Abdizadeh
Keyword(s):  
Sol Gel ◽  
2014 ◽  
Vol 50 (8) ◽  
pp. 1-4 ◽  
Author(s):  
Robina Ashraf ◽  
Saira Riaz ◽  
Mahwish Bashir ◽  
Usman Khan ◽  
Shahzad Naseem

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1737 ◽  
Author(s):  
Ahmad M. Alsaad ◽  
Ahmad A. Ahmad ◽  
Qais M. Al-Bataineh ◽  
Areen A. Bani-Salameh ◽  
Hadeel S. Abdullah ◽  
...  

Sol-gel technique is used to synthesize as-grown zinc oxide (ZnO) and iron-nickel (Fe-Ni) co-doped ZnO thin films deposited on glass substrates using dip coating technique. The structural properties and crystal imperfections of as-prepared thin films are investigated. We performed the structural analysis of films using X-ray diffraction (XRD). The XRD analysis reveal that the as-prepared films exhibit wurtzite structure. Furthermore, XRD-line profile analysis is performed to study the correlation between structural properties and imperfections of the nanocomposite thin films. The crystallite size and microstrains parameters are predicted using the Williamson–Hall method. We found that the crystallites size increases as the co-doped (Fe-Ni) concentration is increased. However, microstrains of the nanocomposite films decreases as (Fe-Ni) concentration is increased. The optical properties of the (Fe-Ni) co-doped nanocomposite films are investigated by performing UV-Vis (250 nm–700 nm) spectrophotometer measurements. We found that as the (Fe-Ni) concentration level is steadily increased, transmittance of the undoped ZnO thin films is decreased. Remarkably, refractive index of undoped ZnO thin films is found to exhibit values extending from 1.55 to1.88 that would increase as (Fe-Ni) concentration is increased.


energyo ◽  
2019 ◽  
Author(s):  
Zohra Nazir Kayani ◽  
Iqra Shah ◽  
Bareera Zulfiqar ◽  
Saira Riaz ◽  
Shahzad Naseem ◽  
...  

2007 ◽  
Vol 310 (2) ◽  
pp. 2092-2094 ◽  
Author(s):  
Y. Belghazi ◽  
G. Schmerber ◽  
S. Colis ◽  
J.L. Rehspringer ◽  
A. Berrada ◽  
...  

2020 ◽  
Vol 1206 ◽  
pp. 127773
Author(s):  
T. Ivanova ◽  
A. Harizanova ◽  
T. Koutzarova ◽  
B. Vertruyen ◽  
R. Closset

2012 ◽  
Vol 557-559 ◽  
pp. 1641-1644
Author(s):  
Zhan Chang Pan ◽  
Xin Long Tian ◽  
Guang Hui Hu ◽  
Chu Min Xiao ◽  
Zhi Gang Wei ◽  
...  

Al–Sn co-doped ZnO thin films were fabricated onto quartz glass substrates by the sol-gel method. The surface morphology, electrical and optical properties at different post-deposition heating temperatures were investigated. The grains of preferred c-axis showed a well-mixed microstructure and the peak height was enhanced with the post-deposition heating temperature increasing from 400°C to 600°C. Doped films showed a preferential orientation along the (002) plane, while the preferential orientation changed to the (101) plane when temperature was higher than 500°C. The lowest resistivity 6×10–3Ω•cm was observed from samples made at 500°C, with an average 91.2% optical transmittance in the visible range. In this study, optical band gap of all the doped films were broadened, regardless of post–deposition heating temperature.


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