AFM study of excimer laser patterning of block-copolymer: Creation of ordered hierarchical, hybrid, or recessed structures

2016 ◽  
Vol 371 ◽  
pp. 203-212 ◽  
Author(s):  
Jan Švanda ◽  
Jakub Siegel ◽  
Vaclav Švorčík ◽  
Oleksiy Lyutakov
1997 ◽  
Vol 109-110 ◽  
pp. 194-200 ◽  
Author(s):  
W. Pfleging ◽  
A. Vörckel ◽  
H. Duddek ◽  
D.A. Wesner ◽  
E.W. Kreutz

Author(s):  
Dae Up Ahn ◽  
Erol Sancaktar

We report easy and fast fabrication methods to prepare densely packed polystyrene (PS) and silicon nano-dots using one-step excimer laser irradiation on cylindrically nanopatterned block copolymer materials, without any additional selective etching steps before a non-selective etching. Preferential etching in more ultraviolet (UV)-sensitive block component, and non-selective removal of all block components allowed transferring nanopatterns in block copolymer masks to inorganic silicon substrates, when an appropriate laser intensity was used. Surface melt flows of block components, which severely undermine the initial orders of nanopatterns in a block copolymer mask, were observed at the laser intensity near the ablation threshold of the less UV-sensitive component. Thus, in order to obtain mask-image-like topographic nanopatterns on the target material surfaces, the intensity of excimer laser radiation should be sufficiently lower than the ablation threshold of the less UV-sensitive component as long as the intensity is higher than that of the more UV-sensitive component. Numerical analyses on the photothermal excimer laser ablation in binary mixture systems predicted the presence of a matrix-assisted excimer laser ablation in the less UV-sensitive component at the laser intensity lower than its ablation threshold, owing to the heat conduction from the more UV-sensitive component during the nanoscopic level of time duration.


2017 ◽  
Vol 2017 (1) ◽  
pp. 000113-000119
Author(s):  
Habib Hichri ◽  
Shohei Fujishima ◽  
Seongkuk Lee ◽  
Markus Arendt ◽  
Shigeo Nakamura

Abstract Fan-Out technologies continue to be the main driver for advanced packaging, be it on wafer level (FOWLP) or panel level (FOPLP). There is a continuing need for higher density routing and heterogeneous integration of different devices, but also for continuous cost reduction. While traditional organic flip-chip substrates using semi-additive processes (SAP) have not been able to scale to ultra-fine RDL pitches and via opening below 10um, photo-sensitive spin-on dielectrics and RDL processes used for wafer level packaging do not sufficiently address the cost reduction need, and also face serious technical challenges. This paper presents the latest results from an innovative package RDL and micro via processes using excimer laser ablation in an especially developed non-photo sensitive material, to meet the market's most stringent requirements. To enable panel and wafer based interposers to reduce RDL cost and scale interconnect pitch to 40um and below, excimer laser ablation is introduced as a direct patterning process that uses proven industrialized excimer laser sources to emit high-energy pulses at short wavelengths to remove polymer materials with high precision and high throughput. The combination of a high-power excimer laser source, large-field laser mask and precision projection optics enables the accurate replication and placement of fine resolution circuit patterns without the need for any wet-processing. With excimer laser patterning technology the industry gains a much wider choice of dielectric materials (photo and non-photo) to help achieve further reductions in manufacturing costs as well as enhancements in interposer and package performance. In this paper, we propose a novel patterning process that uses excimer laser ablation to integrate via and RDL traces in one patterning step, followed by seed layer deposition, plating and planarization. The capability of this excimer laser patterning process in non-photo materials Ajinomoto Build-up Film, which is abbreviated to “ABF” in this paper, will be discussed, and its technical robustness and commercial advantages are demonstrated. We will present electrical and reliability data of Via and RDL traces patterned by excimer laser in ABF material.


1997 ◽  
Vol 10 (5) ◽  
pp. 325-329 ◽  
Author(s):  
Y Hakuraku ◽  
Y Shimada ◽  
M Itoh

1998 ◽  
Vol 12 (32) ◽  
pp. 3485-3494 ◽  
Author(s):  
S. Higo ◽  
Y. Hakuraku ◽  
Y. Shimada ◽  
E. Minamizono ◽  
M. Tadokoro ◽  
...  

Micropatterning of BiSrCaCuO(BSCCO) superconducting thin films has been successfully accomplished by using a pulsed KrF excimer laser with a wavelength of λ=248 nm and a duration of 25 ns. The optimum energy density of the laser was 0.36 Jcm -2 for etching of these films. For example, a superconducting microstructure of BSCCO film with nominally 3 μm wide and 2 μm long, showed no degradation in T c and J c . Excimer laser patterning technique yields reproducible patterning without any degradation of superconducting properties. The etching bordering and surface morphology was examined using an atomic force microscope.


1989 ◽  
Vol 25 (11) ◽  
pp. 2399-2404 ◽  
Author(s):  
N. Savva ◽  
K.F. Williams ◽  
G.M. Davis ◽  
M.C. Gower

1993 ◽  
Vol 2 (5-7) ◽  
pp. 829-834 ◽  
Author(s):  
C. Johnston ◽  
P.R. Chalker ◽  
I.M. Buckley-Golder ◽  
P.J. Marsden ◽  
S.W. Williams

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