Fabrication of carboxymethyl cellulose and graphene oxide bio-nanocomposites for flexible nonvolatile resistive switching memory devices

2019 ◽  
Vol 214 ◽  
pp. 213-220 ◽  
Author(s):  
Tao Liu ◽  
Wei Wu ◽  
Kai-Ning Liao ◽  
Qijun Sun ◽  
Xianjing Gong ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Carboxymethyl Cellulose ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Memory Devices: Photocatalytic Reduction of Graphene Oxide-TiO2 Nanocomposites for Improving Resistive-Switching Memory Behaviors (Small 29/2018)

Small ◽  
2018 ◽  
Vol 14 (29) ◽  
pp. 1870136 ◽  
Author(s):  
Xiaoning Zhao ◽  
Zhongqiang Wang ◽  
Yu Xie ◽  
Haiyang Xu ◽  
Jiaxue Zhu ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Photocatalytic Reduction ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory

Flexible Resistive Switching Memory Devices Based on Graphene Oxide Polymer Nanocomposite

NANO ◽  
2020 ◽  
Vol 15 (09) ◽  
pp. 2050111
Author(s):  
Enming Zhao ◽  
Shuangqiang Liu ◽  
Xiaodan Liu ◽  
Chen Wang ◽  
Guangyu Liu ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Flexible Substrate ◽  
Random Access ◽  
Polymer Nanocomposite ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Memory Characteristic ◽  
Switching Memory

Flexible resistive switching memory devices based on graphene oxide (GO) polymer nanocomposite were prepared on flexible substrate to research the influence of bending on resistive switching behavior. The devices showed evident response in resistive switching memory characteristics to flexible bending. The 2000 cycles flexible bending leads to the switch of resistive switching memory characteristic from write-once-read-many time memory (WORM) to static random access memory (SRAM). Both WORM and SRAM memory properties are all repeatable, and the threshold switching voltage also showed good consistency. The resistive switching mechanism is attributed to the formation of carbon-rich conductive filaments for nonvolatile WORM characteristics. The bending-induced micro-crack may be responsible for the partial broken of the electrical channels, and may lead to the volatile SRAM characteristics.

Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices

2016 ◽  
Vol 72 (2) ◽  
pp. 25-33 ◽  
Author(s):  
Y.-C. Chen ◽  
Y.-F. Chang ◽  
X. Wu ◽  
M. Guo ◽  
B. Fowler ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory

Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

2021 ◽  
Vol 9 (39) ◽  
pp. 13755-13760
Author(s):  
Songcheng Hu ◽  
Zhenhua Tang ◽  
Li Zhang ◽  
Dijie Yao ◽  
Zhigang Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Carrier Transport ◽  
Electronic Devices ◽  
Differential Resistance ◽  
Memory Devices ◽  
Transport Mechanisms ◽  
Resistive Switching Memory ◽  
Potential Applications ◽  
Switching Memory

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

All-inorganic perovskite Cs4PbBr6 thin films in optoelectronic resistive switching memory devices with a logic application

2019 ◽  
Vol 45 (5) ◽  
pp. 5724-5730 ◽  
Author(s):  
Huaizu Cai ◽  
Meimei Lao ◽  
Jun Xu ◽  
Yukai Chen ◽  
Chujie Zhong ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Resistive Switching Memory ◽  
Switching Memory

Top-Down Synthesis of Hollow Graphene Nanostructures for Use in Resistive Switching Memory Devices

2017 ◽  
Vol 3 (10) ◽  
pp. 1700264 ◽  
Author(s):  
Gopinathan Anoop ◽  
Tae Yeon Kim ◽  
Hye Jeong Lee ◽  
Varij Panwar ◽  
Jeong Hun Kwak ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Top Down ◽  
Resistive Switching Memory ◽  
Switching Memory ◽  
Graphene Nanostructures

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

Linkage and donor–acceptor effects on resistive switching memory devices of 4-(N-carbazolyl)triphenylamine-based polymers

RSC Advances ◽  
2016 ◽  
Vol 6 (34) ◽  
pp. 28815-28819 ◽  
Author(s):  
Tzu-Tien Huang ◽  
Chia-Liang Tsai ◽  
Sheng-Huei Hsiao ◽  
Guey-Sheng Liou
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Linkage Effect ◽  
Donor Acceptor ◽  
Switching Memory

In order to gain deeper insight about the linkage effect and donor–acceptor effect on memory behavior (from DRAM to WORM), 4-(N-carbazolyl)triphenylamine-based polyimides and polyamides were synthesized and their memory behaviours were investigated.

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